RA4L1 datasheet(108/125 Pages) RENESAS

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Note 3. This result is obtained from reliability testing.

Table 2.80

Data flash characteristics (2)

High-speed operating mode

Conditions: VCC = AVCC0 = 1.8 to 3.6 V

Parameter

Symbol

ICLK = 1 MHz

ICLK = 48 MHz

Unit

Min

Typ

Max

Min

Typ

Max

Programming time

1-byte

tDP1

—

112

903

—

33.9

317

µs

Erasure time

256-byte

tDE256

—

14.1

390

—

5.50

214

Blank check time

1-byte

tDBC1

—

67.7

—

8.6

µs

256-byte

tDBC256

—

7538

—

272

µs

Suspended time during erasing

tDSED

—

33.4

—

10.7

µs

Forced stop time

tFD

—

33.4

—

10.7

µs

Data flash STOP recovery time

tDSTOP

250

—

250

—

Note:

Does not include the time until each operation of the flash memory is started after instructions are executed by software.

Note:

The lower-limit frequency of FCLK is 1 MHz during programming or erasing the flash memory.

Note:

The frequency accuracy of FCLK must be ± 1.0% during programming or erasing the flash memory. Confirm the frequency accuracy

of the clock source.

Table 2.81

Data flash characteristics (3)

Middle-speed operating mode

Conditions: VCC = AVCC0 = 1.6 to 3.6 V

Parameter

Symbol

ICLK = 1 MHz

ICLK = 8 MHz*1

Unit

Min

Typ

Max

Min

Typ

Max

Programming time

1-byte

tDP1

—

112

903

—

39.7

359

µs

Erasure time

256-byte

tDE256

—

14.1

390

—

6.32

231

Blank check time

1-byte

tDBC1

—

67.7

—

13.3

µs

256-byte

tDBC256

—

7538

—

947

µs

Suspended time during erasing

tDSED

—

33.4

—

13.1

µs

Forced stop time

tFD

—

33.4

—

13.1

µs

Data flash STOP recovery time

tDSTOP

250

—

250

—

Note:

Does not include the time until each operation of the flash memory is started after instructions are executed by software.

Note:

The lower-limit frequency of FCLK is 1 MHz during programming or erasing the flash memory.

Note:

The frequency accuracy of FCLK must be ± 1.0% during programming or erasing the flash memory. Confirm the frequency accuracy

of the clock source.

Note 1. When 1.8 V ≤ VCC = AVCC0 ≤ 3.6 V

Table 2.82

Data flash characteristics (4)

Low-speed operating mode

Conditions: VCC = AVCC0 = 1.6 to 3.6 V

Parameter

Symbol

ICLK = 1 MHz

Unit

Min

Typ

Max

Programming time

1-byte

tDP1

—

112

903

µs

Erasure time

256-byte

tDE256

—

14.1

390

Blank check time

1-byte

tDBC1

—

67.7

µs

256-byte

tDBC256

—

7538

µs

Suspended time during erasing

tDSED

—

33.4

µs

Forced stop time

tFD

—

33.4

µs

Data flash STOP recovery time

tDSTOP

250

—

Note:

Does not include the time until each operation of the flash memory is started after instructions are executed by software.

RA4L1 Datasheet

2. Electrical Characteristics

R01DS0447EJ0131 Rev.1.31

May 26, 2026

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