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ST6373 Folha de dados(PDF) 13 Page - STMicroelectronics

Nome de Peças ST6373
Descrição Electrónicos  8-BIT ROM/OTP/EPROM MCUs FOR DIGITALLY CONTROLLED MULTISYNC/MULTISTANDARD MONITORS
PDF  64 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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MEMORY SPACES (Cont’d)
By programming the Data RAM Bank Register,
DRBR, the user can select the bank or page leav-
ing unaffected the means of addressing the static
registers. The way to address the “dynamic” page
is to set the DRBR as described in Table 5 (e.g. to
select EEPROM page 0, the DRBR has to be load-
ed with content 01h, see Data RAM/EEPROM ad-
dressing for additional information). Bits 0,1 and
4,5,7 of the DRBR are dedicated to the standard
EEPROM and DDC EEPROM respectively.
The EEPROM pages do not require dedicated in-
structions to be accessed in reading or writing.
The standard EEPROM is controlled by the EEP-
ROM Control Register, EECR, the DDC EEPROM
is controlled by the DDC EPROM Control Register
DEECR, in the same way. Any EEPROM location
can be read just like any other data location, also
in terms of access time.
To write an EEPROM location takes an average
time of 5ms and during this time the EEPROM is
not accessible by the Core. A busy flag can be
read by the Core to know the EEPROM status be-
fore trying any access. In writing the EEPROM can
work in two modes: Byte Mode (BMODE) and Par-
allel Mode (PMODE). TheBMODE is the normal
way to use the EEPROM and consists in access-
ing one byte at a time. The PMODE consists in ac-
cessing 8 bytes per time.
EEPROM Control Register (EECR)
Address: EAh - Read/Write
Reset Value: 00h
DDC EEPROM Control Register (DDCEECR)
Address: E9h - Read/Write
Reset Value: 00h
D7. Not used
SB. WRITE ONLY. If this bit is set the EEPROM is
disabled (any access will be meaningless) and the
power consumption of the EEPROM is reduced to
the leakage values.
D5, D4. Reserved for testing purposes, they must
be set to zero.
PS. SET ONLY. Once in Parallel Mode, as soon
as the user software sets the PS bit the parallel
writing of the 8 adjacent registers will start. PS is
internally reset at the end of the programming pro-
cedure. Note that less than 8 bytes can be written;
after parallel programming the remaining unde-
fined bytes will have no particular content.
PE. WRITE ONLY. This bit must be set by the user
program in order to perform parallel programming
(more bytes per time). If PE is set and the “parallel
start bit” (PS) is low, up to 8 adjacent bytes can be
written at the maximum speed, the content being
stored in volatile registers. These 8 adjacent bytes
can be considered as row, whose A7, A6, A5, A4,
A3 are fixed while A2, A1 and A0 are the changing
bytes. PE is automatically reset at the end of any
parallel programming procedure. PE can be reset
by the user software before starting the program-
ming procedure, leaving unchanged the EEPROM
registers.
BS. READ ONLY. This bit will be automatically set
by the CORE when the user program modifies an
EEPROM register. The user program has to test it
before any read or write EEPROM operation; any
attempt to access the EEPROM while “busy bit” is
set will be aborted and the writing procedure in
progress completed.
EN. WRITE ONLY. This bit MUST be set to one in
order to write any EEPROM register. If the user
program will attempt to write the EEPROM when
EN= “0” the involved registers will be unaffected
and the “busy bit” will not be set.
Notes:
When the EEPROM is busy (BS = “1”) the EECR
cannot be accessed in write mode, it is only possi-
ble to read BS status. This implies that, as long as
the EEPROM is busy, it is not possible to change
the status of the EEPROM control register. EECR
bits 4 and 5 are reserved for test purposes, and
must never be set.
70
-SB
Re-
served
Re-
served
PS
PE
BS
EN
70
-SB
Re-
served
Re-
served
PS
PE
BS
EN



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