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ST6373 Folha de dados(PDF) 13 Page - STMicroelectronics |
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ST6373 Folha de dados(HTML) 13 Page - STMicroelectronics |
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13 / 64 page ![]() ST6373 13/64 MEMORY SPACES (Cont’d) By programming the Data RAM Bank Register, DRBR, the user can select the bank or page leav- ing unaffected the means of addressing the static registers. The way to address the “dynamic” page is to set the DRBR as described in Table 5 (e.g. to select EEPROM page 0, the DRBR has to be load- ed with content 01h, see Data RAM/EEPROM ad- dressing for additional information). Bits 0,1 and 4,5,7 of the DRBR are dedicated to the standard EEPROM and DDC EEPROM respectively. The EEPROM pages do not require dedicated in- structions to be accessed in reading or writing. The standard EEPROM is controlled by the EEP- ROM Control Register, EECR, the DDC EEPROM is controlled by the DDC EPROM Control Register DEECR, in the same way. Any EEPROM location can be read just like any other data location, also in terms of access time. To write an EEPROM location takes an average time of 5ms and during this time the EEPROM is not accessible by the Core. A busy flag can be read by the Core to know the EEPROM status be- fore trying any access. In writing the EEPROM can work in two modes: Byte Mode (BMODE) and Par- allel Mode (PMODE). TheBMODE is the normal way to use the EEPROM and consists in access- ing one byte at a time. The PMODE consists in ac- cessing 8 bytes per time. EEPROM Control Register (EECR) Address: EAh - Read/Write Reset Value: 00h DDC EEPROM Control Register (DDCEECR) Address: E9h - Read/Write Reset Value: 00h D7. Not used SB. WRITE ONLY. If this bit is set the EEPROM is disabled (any access will be meaningless) and the power consumption of the EEPROM is reduced to the leakage values. D5, D4. Reserved for testing purposes, they must be set to zero. PS. SET ONLY. Once in Parallel Mode, as soon as the user software sets the PS bit the parallel writing of the 8 adjacent registers will start. PS is internally reset at the end of the programming pro- cedure. Note that less than 8 bytes can be written; after parallel programming the remaining unde- fined bytes will have no particular content. PE. WRITE ONLY. This bit must be set by the user program in order to perform parallel programming (more bytes per time). If PE is set and the “parallel start bit” (PS) is low, up to 8 adjacent bytes can be written at the maximum speed, the content being stored in volatile registers. These 8 adjacent bytes can be considered as row, whose A7, A6, A5, A4, A3 are fixed while A2, A1 and A0 are the changing bytes. PE is automatically reset at the end of any parallel programming procedure. PE can be reset by the user software before starting the program- ming procedure, leaving unchanged the EEPROM registers. BS. READ ONLY. This bit will be automatically set by the CORE when the user program modifies an EEPROM register. The user program has to test it before any read or write EEPROM operation; any attempt to access the EEPROM while “busy bit” is set will be aborted and the writing procedure in progress completed. EN. WRITE ONLY. This bit MUST be set to one in order to write any EEPROM register. If the user program will attempt to write the EEPROM when EN= “0” the involved registers will be unaffected and the “busy bit” will not be set. Notes: When the EEPROM is busy (BS = “1”) the EECR cannot be accessed in write mode, it is only possi- ble to read BS status. This implies that, as long as the EEPROM is busy, it is not possible to change the status of the EEPROM control register. EECR bits 4 and 5 are reserved for test purposes, and must never be set. 70 -SB Re- served Re- served PS PE BS EN 70 -SB Re- served Re- served PS PE BS EN |
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