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GD32H757ZMT7 Folha de dados(PDF) 87 Page - GigaDevice Semiconductor (Beijing) Inc.

Nome de Peças GD32H757ZMT7
Descrição Electrónicos  Arm® Cortex®-M7 32-bit MCU
PDF  151 Pages
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Fabricante Electrônico  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Página de início  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD32H757ZMT7 Folha de dados(HTML) 87 Page - GigaDevice Semiconductor (Beijing) Inc.

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GD32H757xx Datasheet
86
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit
VDDA
Analog supply voltage
Same as VDD
1.71
3.3
3.6
V
VBAT
Battery supply voltage
—
1.71
—
3.6
V
VCORE(2)
VCORE supply voltage
Bypass mode
0.873
0.9
0.955
V
(1)
Value guaranteed by characterization, not 100% tested in production.
(2)
The power-up and power-down sequence for the power bypass mode should meet the requirements as
illustrated in
Figure 4-1. Bypass Mode Power-up and Power-down Timing Diagram (1)(2)(3).
Figure 4-1. Bypass Mode Power-up and Power-down Timing Diagram (1)(2)(3)
POR threshold
PDR threshold
VC OR E > 0.85V
VC OR E > 0.85V
Mi n VC OR E at
s tart up 0. 85V
Mi n VC OR E at
power down 0. 85V
VDD/VDDA
VCORE
(1)
Before the MCU's VDD/VDDA voltage rises to the POR (Power-On Reset) threshold, ensure that the VCORE
voltage is greater than 0.85 V.
(2)
Before the MCU's VDD/VDDA voltage drops to the PDR (Power-Down Reset) threshold, ensure that the
VCORE voltage is greater than 0.85 V
(3)
Under any operating condition, ensure that the VDD/VDDA voltage is greater than the VCORE voltage.



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