CC1010-RTY1 datasheet(37/152 Pages) TI

37 / 152 page

CC1010

SWRS047

Page 37 of 152

15.10 Flash Program Memory

CC1010 has 32 kBytes of on-chip Flash

program memory. It is divided into 256

pages of 128 bytes each. It can be

programmed / erased through a serial SPI

interface or page-by-page from the 8051

as described in the following sections.

The endurance for the Flash program

memory is typically 20.000 erase / write

cycles.

The Flash program memory can be locked

for further reading / writing by setting

appropriate lock bits through the serial

interface. Chip erase must be performed

to unlock the memory. This provides a way

to prevent software from being copied by

others. It can also prevent parts of the

Flash memory from being modified by

software, such as a boot loader that

should remain unchanged. Other parts of

the Flash may still be updated by the boot

loader.

For the security of the Flash protection,

please refer to the disclaimer at the end of

this document.

Erasing a Flash page takes 10-20 ms

depending on the FLTIM register. Writing

to a Flash page takes 5-10 ms.

15.11 SPI Flash Programming

The on-chip Flash program memory can

be programmed using the SPI Flash

programming protocol described in this

section.

SPI Flash programming is enabled when

the pin PROG is held low. This enables the

SPI slave, using the pins SCK (P0.0) as

the clock input, SI (P0.1) as the serial

data input and SO (P0.2) as the serial

data output.

A Windows based Flash programmer is

also available free of charge at the

Chipcon web site.

15.12 Serial Programming Algorithm

When writing serial data to the SPI

interface, data is clocked at the rising edge

of SCK. When reading data from the SPI

interface, data is clocked at the falling

edge of SCK, see Figure 5.

1. Apply power between VDD and DGND

while SCK is set to ‘0’. If a crystal is not

connected between XOSC_Q1 and

XOSC_Q2 apply a clock signal to the

XOSC_Q1 pin.

2. Give RESET a negative pulse of at

least one XOSC period.

3. Set PROG low.

4. Send the Programming Enable

command. Check that the slave is

synchronised by verifying that the

second byte of the instruction is

echoed back when issuing the third

byte. If the second byte did not echo,

issue a positive pulse on SCK and try

again. In the worst case it will take 32

attempts to synchronise.

5. Send the Set Write Cycle Time

command according to the device

clock oscillator frequency. c*16*clock

period must be between 20-40us for

safe flash programming.

6. If a chip erase is performed wait

450ms after the instruction before

issuing Write.

7. Flash memory is programmed one

page at a time. Each page consists of

128 bytes. Load all bytes of the page

that is to be programmed with the

Load Program Memory Page

instruction.

8. When all bytes of a page has been

loaded issue Write Program Memory

Page with the page address. The write

operation finishes within 5.4ms.

CC1010-RTY1 Folha de dados(PDF) 37 Page - Texas Instruments

CC1010-RTY1 Folha de dados(HTML) 37 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Folha de dados Download

Ligação URL