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EM357-RTR Folha de dados(PDF) 16 Page - List of Unclassifed Manufacturers

Nome de Peças EM357-RTR
Descrição Electrónicos  High-Performance, Integrated ZigBee/802.15.4 System-on-Chip
PDF  240 Pages
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Fabricante Electrônico  ETC2 [List of Unclassifed Manufacturers]
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EM357-RTR Folha de dados(HTML) 16 Page - List of Unclassifed Manufacturers

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EM351 / EM357
2-3
120-035X-000D
Preliminary
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Simulated deep sleep (debug mode) current
With no debugger activity
300
μA
Reset Current
Quiescent current, nRESET asserted
Typ at 25°C/3 V
Max at 85°C/3.6 V
1.2
2.0
mA
Processor and Peripheral Currents
ARM® CortexTM-M3, RAM, and flash memory
25°C, 1.8 V memory and 1.25 V core
ARM® CortexTM-M3 running at 12 MHz from
crystal oscillator
Radio and all peripherals off
6.0
mA
ARM® CortexTM-M3, RAM, and flash memory
25°C, 1.8 V memory and 1.25 V core
ARM® CortexTM-M3 running at 24 MHz from
crystal oscillator
Radio and all peripherals off
7.5
mA
ARM® CortexTM-M3, RAM, and flash memory
sleep current
25°C, 1.8 V memory and 1.25 V core
ARM® CortexTM-M3 running at 12 MHz from
the crystal oscillator
Radio and all peripherals off
3.0
mA
ARM® CortexTM-M3, RAM, and flash memory
sleep current
25°C, 1.8 V memory and 1.25 V core
ARM® CortexTM-M3 running at 6 MHz from the
high frequency RC oscillator
Radio and all peripherals off
2.0
mA
Serial controller current
For each controller at maximum data rate
0.2
mA
General purpose timer current
For each timer at maximum clock rate
0.25
mA
General purpose ADC current
At maximum sample rate, DMA enabled
1.1
mA
Rx Current
Radio receiver, MAC, and baseband
ARM® CortexTM-M3 sleeping, CPU clock set to
12 MHz
22.0
mA
25°C, VDD_PADS=3.0 V
ARM® CortexTM-M3 running at 12 MHz
25.0
mA
Total Rx current ( = IRadio receiver, MAC and baseband,
CPU + IRAM, and Flash memory )
25°C, VDD_PADS=3.0 V
ARM® CortexTM-M3 running at 24 MHz
26.5
mA
25°C, VDD_PADS=3.0 V
ARM® CortexTM-M3 running at 12 MHz
27.0
mA
Boost mode total Rx current ( = IRadio receiver, MAC
and baseband, CPU+ IRAM, and Flash memory )
25°C, VDD_PADS=3.0 V
ARM® CortexTM-M3 running at 24 MHz
28.5
mA



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