GD32H757VMT7 datasheet(134/151 Pages) GIGADEVICE

134 / 151 page

GD32H757xx Datasheet

133

Symbol

Parameter

Min

Max

Unit

tsu(DATA_NOE)

Data to EXMC_NOEx high setup time

4*Tfclk-1

—

th(DATA_NOE)

Data hold time after EXMC_NOE high

—

th(DATA_NE)

Data hold time after EXMC_NEx high

—

tv(NADV_NE)

EXMC_NEx low to EXMC_NADV low

—

tw(NADV)

EXMC_NADV low time

Tfclk-1

Tfclk+1

(1)

CL = 30 pF.

(2)

Value guaranteed by design, not 100% tested in production.

Table 4-72. Asynchronous non-multiplexed SRAM / PSRAM / NOR write timings(1)(2)

Symbol

Parameter

Min

Max

Unit

tw(NE)

EXMC_NE low time

3*Tfclk-1

3*Tfclk+1

tV(NWE_NE)

EXMC_NEx low to EXMC_NWE low

Tfclk-1

—

tw(NWE)

EXMC_NWE low time

Tfclk-1

Tfclk+1

th(NE_NWE)

EXMC_NWE high to EXMC_NE high hold time

Tfclk-1

Tfclk+1

tv(A_NE)

EXMC_NEx low to EXMC_A valid

—

tV(NADV_NE)

EXMC_NEx low to EXMC_NADV low

—

tw(NADV)

EXMC_NADV low time

Tfclk-1

Tfclk+1

th(AD_NADV)

EXMC_AD(address) valid hold time after

EXMC_NADV high

2*Tfclk-1

—

th(A_NWE)

Address hold time after EXMC_NWE high

Tfclk-1

—

th(BL_NWE)

EXMC_BL hold time after EXMC_NWE high

Tfclk-1

—

tv(BL_NE)

EXMC_NEx low to EXMC_BL valid

—

tv(DATA_NADV)

EXMC_NADV high to DATA valid

—

th(DATA_NWE)

Data hold time after EXMC_NWE high

Tfclk-1

—

(1)

CL = 30 pF.

(2)

Value guaranteed by design, not 100% tested in production.

Table 4-73. Asynchronous multiplexed PSRAM / NOR read timings(1)(2)

Symbol

Parameter

Min

Max

Unit

tw(NE)

EXMC_NE low time

7*Tfclk-1

7*Tfclk+1

tV(NOE_NE)

EXMC_NEx low to EXMC_NOE low

3*Tfclk-1

—

tw(NOE)

EXMC_NOE low time

4*Tfclk-1

4*Tfclk+1

th(NE_NOE)

EXMC_NOE high to EXMC_NE high hold time

—

tv(A_NE)

EXMC_NEx low to EXMC_A valid

—

tv(A_NOE)

Address hold time after EXMC_NOE high

—

tv(BL_NE)

EXMC_NEx low to EXMC_BL valid

—

th(BL_NOE)

EXMC_BL hold time after EXMC_NOE high

—

tsu(DATA_NE)

Data to EXMC_NEx high setup time

4*Tfclk-1

—

tsu(DATA_NOE)

Data to EXMC_NOEx high setup time

4*Tfclk-1

—

th(DATA_NOE)

Data hold time after EXMC_NOE high

—

th(DATA_NE)

Data hold time after EXMC_NEx high

—

tv(NADV_NE)

EXMC_NEx low to EXMC_NADV low

—

tw(NADV)

EXMC_NADV low time

Tfclk-1

Tfclk+1

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