GD32H757VMT7 datasheet(94/151 Pages) GIGADEVICE

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GD32H757xx Datasheet

Table 4-11. Component level ESD characteristics(1)

Symbol

Description

Conditions Package

Max

Unit

Level

VHBM

Human body model

electrostatic discharge voltage

(Any pin combination)

TJ = 25 °C;

JS-001-2017

BGA176

2000

VCDM

Charge device model

electrostatic discharge voltage

(All pins)

TJ = 25 °C;

JS-002-2018

BGA176

500

C2a

(1)

Value guaranteed by characterization, not 100% tested in production.

Table 4-12. Latch-up characteristics(1)

Symbol

Description

Conditions Package

Class

I-test

TA = 125 °C,

JESD78F

BGA176

Level A

Vsupply over voltage

(1)

Value guaranteed by characterization, not 100% tested in production.

4.5.

Power supply supervisor characteristics

Table 4-13. Power supply supervisor characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VLVD(1)

Low voltage

Detector level selection

LVDT<2:0> = 000(rising edge)

—

1.95

—

LVDT<2:0> = 000(falling edge)

—

1.85

—

LVDT<2:0> = 001(rising edge)

—

2.10

—

LVDT<2:0> = 001(falling edge)

—

2.00

—

LVDT<2:0> = 010(rising edge)

—

2.25

—

LVDT<2:0> = 010(falling edge)

—

2.15

—

LVDT<2:0> = 011(rising edge)

—

2.40

—

LVDT<2:0> = 011(falling edge)

—

2.30

—

LVDT<2:0> = 100(rising edge)

—

2.56

—

LVDT<2:0> = 100(falling edge)

—

2.46

—

LVDT<2:0> = 101(rising edge)

—

2.70

—

LVDT<2:0> = 101(falling edge)

—

2.60

—

LVDT<2:0> = 110(rising edge)

—

2.86

—

LVDT<2:0> = 110(falling edge)

—

2.75

—

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