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GD32H757VMT7 Folha de dados(PDF) 120 Page - GigaDevice Semiconductor (Beijing) Inc.

Nome de Peças GD32H757VMT7
Descrição Electrónicos  Arm® Cortex®-M7 32-bit MCU
PDF  151 Pages
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Fabricante Electrônico  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Página de início  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD32H757VMT7 Folha de dados(HTML) 120 Page - GigaDevice Semiconductor (Beijing) Inc.

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GD32H757xx Datasheet
119
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Low Hysteresis
7
10
17
Medium Hysteresis
15
20
34
High Hysteresis
23
30
52
(1)
Value guaranteed by design, not 100% tested in production.
(2)
Value guaranteed by characterization, not 100% tested in production.
4.20.
Temperature and VBAT monitoring
Table 4-50. VBAT monitoring characteristics(1)
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
—
25
—
kΩ
Q
Ratio on VBAT measurement
—
4
—
—
Er
Error on Q
-10
—
+10
%
tSAMPLE(VBAT)
ADC sampling time when reading VBAT input
10
—
—
μs
VBAT(high)
High supply monitoring
—
3.56
—
V
VBAT(low)
Low supply monitoring
—
1.36
—
(1)
Value guaranteed by design, not 100% tested in production.
Table 4-51. VBAT charging characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RBC
Battery charging resistor
VCRSEL = 0
—
5
—
kΩ
VCRSEL = 1
—
1.5
—
Table 4-52. Temperature monitoring characteristics(1)
Symbol
Parameter
Min
Typ
Max
Unit
TEMPhigh
High temperature monitoring
—
120
—
°C
TEMPlow
Low temperature monitoring
—
-27
—
(1)
Value guaranteed by design, not 100% tested in production.
4.21.
DAC characteristics
Table 4-53. DAC characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDDA
Operating voltage
—
1.8
3.3
3.6
V
VREFP
Positive Reference Voltage
—
1.8
—
VDDA
V
VREFN
Negative Reference
Voltage
—
—
VSSA
—
V
RLOAD(1)
Resistive load
Resistive load with
buffer ON
connected
to VSSA
5
—
—
kΩ
connected
to VDDA
5
—
—
Ro(1)
Impedance output
Impedance output with buffer
—
—
15
kΩ



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