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GD32H757VMT7 Folha de dados(PDF) 117 Page - GigaDevice Semiconductor (Beijing) Inc.

Nome de Peças GD32H757VMT7
Descrição Electrónicos  Arm® Cortex®-M7 32-bit MCU
PDF  151 Pages
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Fabricante Electrônico  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Página de início  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

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4.16.
Temperature sensor characteristics
Table 4-45. Temperature sensor characteristics(1)
Symbol
Parameter
Min
Typ
Max
Unit
TL
VSENSE linearity with temperature
—
±3.5
—
°C
Avg_Slope
Average slope
—
1.84
—
mV/°C
V25
Voltage at TJ = 25 °C
—
0.66
—
V
tS_temp(2)
ADC sampling time when reading the temperature
—
17.1
—
μs
(1)
Value guaranteed by characterization, not 100% tested in production.
(2)
Shortest sampling time can be determined in the application by multiple iterations.
Table 4-46. Temperature sensor calibration values
Symbol
Parameter
Memory address
TS_CAL1
Temperature sensor raw data acquired
value at 25 °C,VREFP = 3.3 V
0x1FF0F7C0
TS_CAL2
Temperature sensor raw data acquired
value at -40 °C,VREFP = 3.3 V
0x1FF0F7C2
4.17.
Low power digital temperature sensor characteristics
Table 4-47. Low power digital temperature sensor characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDDA(2)
Supply voltage
—
1.71
3.3
3.6
V
fDTS(1)
Output Clock frequency
—
626
798
1030
kHz
TLC(1)
Temperature linearity
coefficient
—
1307 2340 2744 Hz/°C
TTOTAL(ERROR)(1)
Temperature offset
measurement
TJ = -40 °C to 25 °C
-6.4
—
2.4
°C
TJ = 25 °C to TJmax
-10.6
—
1.3
tWAKE_UP(2)
Wake-up time from off
state until DTS ready bit
is set
—
—
352
—
μs
ILPDTS(1)
LPDTS consumption
—
—
26
—
μA
(1)
Value guaranteed by characterization, not 100% tested in production.
(2)
Value guaranteed by design, not 100% tested in production.
4.18.
Voltage reference buffer characteristics
Table 4-48. Voltage reference buffer characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDDA
Supply voltage
Normal
mode,
VDDA =
VREFS = 00
2.8
3.3
3.6
V
VREFS = 01
2.4
—
3.6
VREFS = 10
2.1
—
3.6



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