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GD32H757VMT7 Folha de dados(PDF) 117 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD32H757VMT7 Folha de dados(HTML) 117 Page - GigaDevice Semiconductor (Beijing) Inc. |
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117 / 151 page ![]() GD32H757xx Datasheet 116 4.16. Temperature sensor characteristics Table 4-45. Temperature sensor characteristics(1) Symbol Parameter Min Typ Max Unit TL VSENSE linearity with temperature — ±3.5 — °C Avg_Slope Average slope — 1.84 — mV/°C V25 Voltage at TJ = 25 °C — 0.66 — V tS_temp(2) ADC sampling time when reading the temperature — 17.1 — μs (1) Value guaranteed by characterization, not 100% tested in production. (2) Shortest sampling time can be determined in the application by multiple iterations. Table 4-46. Temperature sensor calibration values Symbol Parameter Memory address TS_CAL1 Temperature sensor raw data acquired value at 25 °C,VREFP = 3.3 V 0x1FF0F7C0 TS_CAL2 Temperature sensor raw data acquired value at -40 °C,VREFP = 3.3 V 0x1FF0F7C2 4.17. Low power digital temperature sensor characteristics Table 4-47. Low power digital temperature sensor characteristics Symbol Parameter Conditions Min Typ Max Unit VDDA(2) Supply voltage — 1.71 3.3 3.6 V fDTS(1) Output Clock frequency — 626 798 1030 kHz TLC(1) Temperature linearity coefficient — 1307 2340 2744 Hz/°C TTOTAL(ERROR)(1) Temperature offset measurement TJ = -40 °C to 25 °C -6.4 — 2.4 °C TJ = 25 °C to TJmax -10.6 — 1.3 tWAKE_UP(2) Wake-up time from off state until DTS ready bit is set — — 352 — μs ILPDTS(1) LPDTS consumption — — 26 — μA (1) Value guaranteed by characterization, not 100% tested in production. (2) Value guaranteed by design, not 100% tested in production. 4.18. Voltage reference buffer characteristics Table 4-48. Voltage reference buffer characteristics(1) Symbol Parameter Conditions Min Typ Max Unit VDDA Supply voltage Normal mode, VDDA = VREFS = 00 2.8 3.3 3.6 V VREFS = 01 2.4 — 3.6 VREFS = 10 2.1 — 3.6 |
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