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SST26VF040A-80I/MFVAO Folha de dados(PDF) 38 Page - Microchip Technology

Nome de Peças SST26VF040A-80I/MFVAO
Descrição Electrónicos  2.5V/3.0V 4-Mbit Serial Quad I/O??(SQI?? Flash Memory
PDF  73 Pages
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Fabricante Electrônico  MICROCHIP [Microchip Technology]
Página de início  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST26VF040A-80I/MFVAO Folha de dados(HTML) 38 Page - Microchip Technology

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 2020-2021 Microchip Technology Inc.
DS20006292B-page 38
SST26VF040A
5.34
Deep Power-Down
The Deep Power-Down (DPD) instruction puts the
device in the lowest power consumption mode – the
Deep Power-Down mode. The Deep Power-Down
instruction is ignored during an internal write operation.
While the device is in Deep Power-Down mode, all
instructions will be ignored except for the Release
Deep Power-Down instruction.
Enter Deep Power-Down mode by initiating the Deep
Power-Down (DPD) instruction (B9H) while driving CE#
low. CE# must be driven high before executing the DPD
instruction. After CE# is driven high, it requires a delay
of TDPD before the standby current ISB is reduced to
deep power-down current IDPD. See Table 5-6 for Deep
Power-Down timing. If the device is busy performing an
internal erase or program operation, initiating a Deep
Power-Down instruction will not place the device in
Deep Power-Down mode. See Figures 5-40 and 5-41
for the DPD instruction sequence.
FIGURE 5-40:
DEEP POWER-DOWN (DPD) SEQUENCE – SQI MODE
FIGURE 5-41:
DEEP POWER-DOWN (DPD) SEQUENCE – SPI MODE
TABLE 5-6:
DEEP POWER-DOWN
Symbol
Parameter
Min.
Max.
Units
TDPD
CE# High to Deep Power-Down
—
3
µs
TSBR
CE# High to Standby Mode
—
10
µs
Note:
MSN = Most Significant Nibble; LSN = Least Significant Nibble
MODE 3
SCK
SIO[3:0]
CE#
MODE 0
B9
MSN
LSN
0
1
TDPD
Standby Mode Deep Power-Down Mode
CE#
SO
SI
SCK
01 2 3 4 5 6 7
B9
High-Impedance
MODE 0
MODE 3
MSB
TDPD
Standby Mode Deep Power-Down Mode



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