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SST26VF040A-80I/MFVAO Folha de dados(PDF) 27 Page - Microchip Technology |
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SST26VF040A-80I/MFVAO Folha de dados(HTML) 27 Page - Microchip Technology |
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27 / 73 page ![]() 2020-2021 Microchip Technology Inc. DS20006292B-page 27 SST26VF040A FIGURE 5-20: 4-KBYTE SECTOR ERASE SEQUENCE (SPI) 5.18 32-Kbyte Block Erase and 64-Kbyte Block Erase The 32-Kbyte Block Erase instruction clears all bits in the selected 32-Kbyte block to FFH. The 64-Kbyte Block Erase instruction clears all bits in the selected 64-Kbyte block to FFH. A 32-Kbyte Block Erase or 64-Kbyte Block Erase instruction applied to a protected memory area will be ignored. Prior to any block erase operation, the Write Enable (WREN) instruction must be executed. CE# must remain active-low for the duration of any command sequence. The 32-Kbyte Block Erase instruction is initiated by executing an 8-bit command 52H, followed by address bits [A23:A0]. Address bits [AMS:A15] (AMS = Most Significant Address) are used to determine block address (BAX), remaining address bits can be VIL or VIH. CE# must be driven high before the instruction is executed. The 64-Kbyte Block Erase instruction is initiated by executing an 8-bit command D8H, followed by address bits [A23:A0]. Address bits [AMS:A16] (AMS = Most Significant Address) are used to determine block address (BAX), remaining address bits can be VIL or VIH. CE# must be driven high before the instruction is executed. The user may poll the BUSY bit in the software STATUS register or wait TBE for the completion of the internal self-timed 32-Kbyte Block Erase or 64-Kbyte Block Erase cycles. See Figures 5-21 and 5-22 for the 32-Kbyte Block Erase sequence and Figures 5-23 and 5-24 for the 64-Kbyte Block Erase sequence. FIGURE 5-21: 32-KBYTE BLOCK-ERASE SEQUENCE (SQI) CE# SO SI SCK ADD. 0 1 234 5 6 78 ADD. ADD. 20 High-Impedance 15 16 23 24 31 MODE 0 MODE 3 MSB MSB MODE 3 0 1 SCK SIO[3:0] CE# C1 C0 MODE 0 2 A5 A4 MSN LSN 4 A3 A2 6 A1 A0 Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble, C[1:0] = 52H |
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