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SPC564A70B4 Folha de dados(PDF) 96 Page - STMicroelectronics |
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SPC564A70B4 Folha de dados(HTML) 96 Page - STMicroelectronics |
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96 / 133 page ![]() Electrical characteristics SPC564A70B4, SPC564A70L7 96/133 Doc ID 18078 Rev 4 3.14 Platform flash controller electrical characteristics 3.15 Flash memory electrical characteristics Table 32. APC, RWSC, WWSC settings vs. frequency of operation(1) 1. APC, RWSC and WWSC are fields in the flash memory BIUCR register used to specify wait states for address pipelining and read/write accesses. Illegal combinations exist—all entries must be taken from the same row. Max. Flash Operating Frequency (MHz)(2) 2. Max frequencies including 2% PLL FM. APC(3) 3. APC must be equal to RWSC. RWSC(3) WWSC 20 MHz 0b000 0b000 0b01 61 MHz 0b001 0b001 0b01 90 MHz 0b010 0b010 0b01 123 MHz 0b011 0b011 0b01 153 MHz 0b100 0b100 0b01 Table 33. Flash program and erase specifications(1) # Symbol C Parameter Value Unit Min Typ Initial max(2) Max(3) 1Tdwprogram C C C Double Word (64 bits) Program Time — 30 — 500 µs 2Tpprogram C C C Page Program Time(4) — 40 160 500 µs 3T16kpperase C C C 16 KB Block Pre-program and Erase Time — — 1000 5000 ms 5T64kpperase C C C 64 KB Block Pre-program and Erase Time — — 1800 5000 ms 6T128kpperase C C C 128 KB Block Pre-program and Erase Time — — 2600 7500 ms 7T256kpperase C C C 256 KB Block Pre-program and Erase Time — — 5200 15000 ms 8Tpsrt S R — Program suspend request rate(5) 100 — — — μs 9Tesrt S R — Erase suspend request rate (6) 10 ms 1. Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to change pending device characterization. 2. Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage, 80 MHz minimum system frequency. 3. The maximum erase time occurs after the specified number of program/erase cycles. This maximum value is characterized but not guaranteed. |
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