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SPC564A70B4 Folha de dados(PDF) 76 Page - STMicroelectronics

Nome de Peças SPC564A70B4
Descrição Electrónicos  Up to 4 multiply and accumulate operations per cycle
PDF  133 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SPC564A70B4 Folha de dados(HTML) 76 Page - STMicroelectronics

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Electrical characteristics
SPC564A70B4, SPC564A70L7
76/133
Doc ID 18078 Rev 4
3.4
EMI (electromagnetic interference) characteristics
3.5
Electrostatic discharge (ESD) characteristics
Table 13.
EMI testing specifications(1)
Symbol
Parameter
Conditions
fOSC/fBUS
Frequency
Level
(max)
Unit
VRE_TEM
Radiated emissions,
electric field
VDD =5.25 V;
TA =+25 °C
150 kHz–30 MHz —
RBW 9 kHz, step size
5kHz
30 MHz–1 GHz —
RBW 120 kHz, step
size 80 kHz
16 MHz crystal
40 MHz bus
No PLL frequency
modulation
150 kHz–50 MHz
20
dBµV
50–150 MHz
20
150–500 MHz
26
500–1000 MHz
26
IEC Level
K
SAE Level
3
16 MHz crystal
40 MHz bus
±2% PLL frequency
modulation
150 kHz–50 MHz
13
dBµV
50–150 MHz
13
150–500 MHz
11
500–1000 MHz
13
IEC Level
L
SAE Level
2
1.
EMI testing and I/O port waveforms per standard IEC 61967-2.
Table 14.
ESD ratings(1)(2)
Symbol
Parameter
Conditions
Value
Unit
SR
ESD for Human Body Model (HBM)
2000
V
R1
SR
HBM circuit description
1500
Ω
CSR
—100
pF
SR
ESD for Field Induced Charge Model (FDCM)
All pins
500
V
Corner pins
750
SR
Number of pulses per pin
Positive pulses (HBM)
1
Negative pulses (HBM)
1
SR
Number of pulses
1
1.
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits.
2.
Device failure is defined as: “If after exposure to ESD pulses, the device does not meet the device specification
requirements, which includes the complete DC parametric and functional testing at room temperature and hot
temperature.”



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