OPTION_REG datasheet(26/222 Pages) MICROCHIP

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MCP19111

DS22331A-page 26

 2013 Microchip Technology Inc.

GPIO Input High Voltage

VIH

2.0

—

VDD

I/O Port with TTL buffer,

VDD =5V, TA =+90°C

0.8VDD

—VDD

I/O Port with Schmitt Trigger

buffer, VDD =5V, TA = +90°C

0.8VDD

—VDD

VMCLR, TA = +90°C

Thermal Shutdown

TSHD

—160

—

°C

Thermal Shutdown

Hysteresis

TSHD_HYS

—20

—

°C

4.3

Thermal Specifications

Parameter

Symbol

Min

Typ

Max

Units

Test Conditions

Temperature Ranges

Specified Temperature Range

-40

—

+125

C

Operating Temperature Range

-40

—

+125

C

Maximum Junction Temperature

——

+150

C

Storage Temperature Range

-65

—

+150

C

Thermal Package Resistances

Thermal Resistance, 28L-QFN 5x5



—35.3

—

C/W

4.2

Electrical Characteristics (Continued)

Electrical Specifications: Unless otherwise noted, VIN = 12V, VREF = 1.2V, FSW =300 kHz, TA =+25°C.

Boldface specifications apply over the TA range of -40°C to +125°C.

Parameter

Symbol

Min

Typ

Max

Units

Conditions

Note 1:

Ensured by design. Not production tested.

VDD-OUT is the voltage present at the VDD pin. VDD is the internally generated bias voltage.

This is the total source current for all GPIO pins combined. Individually, each pin can source a maximum of

25 mA.

PE1 = 0x00h, ABECON = 0x00h, ATSTCON = 0x80h, WPUGPA = 0x00h, WPUGPB = 0x00h, and

SLEEP command issued to PIC core, see SECTION 16.0.

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