HD64F2149YV datasheet(761/1075 Pages) RENESAS

761 / 1075 page

Section 22 ROM

Rev. 3.00 Jan 18, 2006 page 733 of 1044

REJ09B0280-0300

Do not set or clear the SWE bit during program execution in flash memory. Wait for at least

100 µs after clearing the SWE bit before executing a program or reading data in flash memory.

When the SWE bit is set, data in flash memory can be rewritten, but when SWE = 1 the flash

memory can only be read in program-verify or erase-verify mode. Flash memory should only be

accessed for verify operations (verification during programming/erasing). Do not clear the SWE

bit during a program, erase, or verify operation.

Do not use interrupts while flash memory is being programmed or erased: All interrupt

requests, including NMI, should be disabled when programming and erasing flash memory to give

priority to program/erase operations.

Do not perform additional programming. Erase the memory before reprogramming. In on-

board programming, perform only one programming operation on a 128-byte programming unit

block. In writer mode, too, perform only one programming operation on a 128-byte programming

unit block. Programming should be carried out with the entire programming unit block erased.

Before programming, check that the chip is correctly mounted in the PROM programmer.

Overcurrent damage to the device can result if the index marks on the PROM programmer socket,

socket adapter, and chip are not correctly aligned.

Do not touch the socket adapter or chip during programming. Touching either of these can

cause contact faults and write errors.

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