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HD64F2149YV Folha de dados(PDF) 760 Page - Renesas Technology Corp

Nome de Peças HD64F2149YV
Descrição Electrónicos  Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2100 Series
PDF  1075 Pages
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Fabricante Electrônico  RENESAS [Renesas Technology Corp]
Página de início  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

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Section 22 ROM
Rev. 3.00 Jan 18, 2006 page 732 of 1044
REJ09B0280-0300
22.10.10
Notes On Memory Programming
• When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming.
• When performing programming using programmer mode on a chip that has been
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas
Technology. For other chips for which the erasure history is unknown, it is
recommended that auto-erasing be executed to check and supplement the initialization
(erase) level.
2. Auto-programming should be performed once only on the same address block.
22.11
Flash Memory Programming and Erasing Precautions
Precautions concerning the use of on-board programming mode and programmer mode are
summarized below.
Use the specified voltages and timing for programming and erasing: Applied voltages in
excess of the rating can permanently damage the device. Use a PROM programmer that supports
3.3 V programming voltage for Renesas Technology microcomputer device types with 64-kbyte
on-chip flash memory.
Do not select the HN28F101 setting for the PROM programmer or 5.0 V setting for the
programming voltage, and only use the specified socket adapter. Incorrect use will result in
damaging the device.
Powering on and off: When applying or disconnecting V
CC, fix the RES pin low and place the
flash memory in the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a power
failure and subsequent recovery.
Use the recommended algorithm when programming and erasing flash memory: The
recommended algorithm enables programming and erasing to be carried out without subjecting the
device to voltage stress or sacrificing program data reliability. When setting the P or E bit in
FLMCR1, the watchdog timer should be set beforehand as a precaution against program runaway,
etc.



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