HD64F2149YV datasheet(757/1075 Pages) RENESAS

757 / 1075 page

Section 22 ROM

Rev. 3.00 Jan 18, 2006 page 729 of 1044

REJ09B0280-0300

Notes on Use of Auto-Erase-Program Mode

• Auto-erase mode supports only entire memory erasing.

• Do not perform a command write during auto-erasing.

• Confirm normal end of auto-erasing by checking FO6. Alternatively, status read mode can also

be used for this purpose (FO7 status polling uses the auto-erase operation end identification

pin).

• The status polling FO6 and FO7 pin information is retained until the next command write.

Until the next command write is performed, reading is possible by enabling

CE and OE.

22.10.7

Status Read Mode

• Status read mode is used to identify what type of abnormal end has occurred. Use this mode

when an abnormal end occurs in auto-program mode or auto-erase mode.

• The return code is retained until a command write for other than status read mode is

performed.

Table 22.19 AC Characteristics in Status Read Mode

Conditions: V

CC = 3.3 V ±0.3 V, VSS = 0 V, Ta = 25°C ±5°C

Item

Symbol

Min

Max

Unit

Command write cycle

nxtc

—

µs

CE hold time

ceh

—

CE setup time

ces

—

Data hold time

—

Data setup time

—

Write pulse width

wep

—

OE output delay time

—

150

Disable delay time

—

100

CE output delay time

—

150

WE rise time

—

WE fall time

—

HD64F2149YV Folha de dados(PDF) 757 Page - Renesas Technology Corp

HD64F2149YV Folha de dados(HTML) 757 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Folha de dados Download

Ligação URL