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COP8CCR9KMT7 Folha de dados(PDF) 13 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Nome de Peças COP8CCR9KMT7
Descrição Electrónicos  8-Bit CMOS Flash Microcontroller with 32k Memory, Virtual EEPROM, 10-Bit A/D and Brownout
PDF  84 Pages
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Fabricante Electrônico  NSC [National Semiconductor (TI)]
Página de início  http://www.national.com
Logo NSC - National Semiconductor (TI)

COP8CCR9KMT7 Folha de dados(HTML) 13 Page - National Semiconductor (TI)

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8.0 Electrical Characteristics (Continued)
DC Electrical Characteristics (−40˚C
≤ T
A ≤ +85˚C) (Continued)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Output Current Levels
D Outputs
Source
V
CC = 4.5V, VOH = 3.8V
−7
mA
V
CC = 2.7V, VOH = 1.8V
−4
mA
Sink (Note 7)
V
CC = 4.5V, VOL = 1.0V
10
mA
V
CC = 2.7V, VOL = 0.4V
3.5
mA
All Others
Source (Weak Pull-Up Mode)
V
CC = 4.5V, VOH = 3.8V
−10
µA
V
CC = 2.7V, VOH = 1.8V
−5
µA
Source (Push-Pull Mode)
V
CC = 4.5V, VOH = 3.8V
−7
mA
V
CC = 2.7V, VOH = 1.8V
−4
mA
Sink (Push-Pull Mode) (Note 7)
V
CC = 4.5V, VOL = 1.0V
10
mA
V
CC = 2.7V, VOL = 0.4V
3.5
mA
TRI-STATE Leakage
V
CC = 5.5V
−0.5
+0.5
µA
Allowable Sink Current per Pin
15
mA
Maximum Input Current without Latchup (Note 5)
±200
mA
RAM Retention Voltage, V
R (in HALT Mode)
2.0
V
Input Capacitance
7pF
Load Capacitance on D2
1000
pF
Voltage on G6 to Force Execution from Boot
ROM(Note 8)
G6 rise time must be slower than
100 ns
2xV
CC
V
CC +7
V
G6 Rise Time to Force Execution from Boot ROM
100
nS
Input Current on G6 when Input > V
CC
V
IN = 11V, VCC = 5.5V
500
µA
Flash Memory Data Retention
25˚C
100
yrs
Flash Memory Number of Erase/Write Cycles
See Table 13, Typical Flash
Memory Endurance
10
5
cycles
AC Electrical Characteristics (−40˚C
≤ T
A ≤ +85˚C)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Instruction Cycle Time (t
C)
Crystal/Resonator
4.5V
≤ V
CC
≤ 5.5V
0.5
DC
µs
2.7V
≤ V
CC < 4.5V
1.5
DC
µs
Flash Memory Page Erase Time
See Table 13, Typical
Flash Memory
Endurance
1ms
Flash Memory Mass Erase Time
8
ms
Frequency of MICROWIRE/PLUS in
Slave Mode
2
MHz
MICROWIRE/PLUS Setup Time (t
UWS)20
ns
MICROWIRE/PLUS Hold Time (t
UWH)20
ns
MICROWIRE/PLUS Output Propagation
Delay (t
UPD)
150
ns
Input Pulse Width
Interrupt Input High Time
1
t
C
Interrupt Input Low Time
1
t
C
Timer 1 Input High Time
1
t
C
www.national.com
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