IRF830 datasheet(4/7 Pages) PHILIPS

4 / 7 page

Philips Semiconductors

Product specification

PowerMOS transistor

IRF830

Avalanche energy rated

Fig.7. Typical transfer characteristics.

D = f(VGS); parameter Tj

Fig.8. Typical transconductance.

fs = f(ID); parameter Tj

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 3 A; VGS = 10 V

Fig.10. Gate threshold voltage.

GS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS

Fig.11. Sub-threshold drain current.

D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Fig.12. Typical capacitances, C

iss, Coss, Crss.

C = f(V

DS); conditions: VGS = 0 V; f = 1 MHz

PHP4N50

VGS, Gate-Source voltage (Volts)

ID, Drain current (Amps)

Tj = 25 C

Tj = 150 C

VDS > ID x RDS(on)max

-60

-40

-20

100

120

140

Tj / C

VGS(TO) / V

max.

typ.

min.

PHP4N50

ID, Drain current (A)

gfs, Transconductance (S)

Tj = 25 C

150 C

VDS > ID x RDS(on)max

VGS / V

ID / A

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

SUB-THRESHOLD CONDUCTION

typ

2 %

98 %

-60

-40

-20

100 120 140

Tj / C

Normalised RDS(ON) = f(Tj)

100

1000

100

1000

PHP4N50

VDS, Drain-Source voltage (Volts)

Junction capacitances (pF)

Ciss

Coss

Crss

March 1999

Rev 1.000

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