IRF830 datasheet(5/7 Pages) PHILIPS

5 / 7 page

Philips Semiconductors

Product specification

PowerMOS transistor

IRF830

Avalanche energy rated

Fig.13. Typical turn-on gate-charge characteristics.

GS = f(QG); parameter VDS

Fig.14. Typical switching times; t

d(on), tr, td(off), tf = f(RG)

Fig.15. Normalised drain-source breakdown voltage;

(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)

Fig.16. Source-Drain diode characteristic.

F = f(VSDS); parameter Tj

Fig.17. Maximum permissible non-repetitive

avalanche current (I

AS) versus avalanche time (tp);

unclamped inductive load

Fig.18. Maximum permissible repetitive avalanche

current (I

AR) versus avalanche time (tp)

102030

4050607080

PHP4N50

Qg, Gate charge (nC)

VGS, Gate-Source voltage (Volts)

ID = 6 A

Tj = 25 C

250 V

VDD = 400 V

100 V

0.2

0.4

0.6

0.8

1.2

1.4

PHP4N50

VSDS, Source-Drain voltage (Volts)

IF, Source-Drain diode current (Amps)

VGS = 0 V

150 C

Tj = 25 C

1020

3040

5060

100

1000

PHP4N50

RG, Gate resistance (Ohms)

Switching times (ns)

Tj = 25 C

RD = 39 Ohms

VGS = 10 V

td(on)

td(off)

VDD = 250 V

PHP6N50E

0.1

1E-06

1E-05

1E-04

1E-03

1E-02

Avalanche time, tp (s)

Non-repetitive Avalanche current, IAS (A)

25 C

VDS

Tj prior to avalanche = 125 C

-100

-50

100

150

0.85

0.9

0.95

1.05

1.1

1.15

Tj, Junction temperature (C)

Normalised Drain-source breakdown voltage

V(BR)DSS @ Tj

V(BR)DSS @ 25 C

PHP6N50E

0.01

0.1

1E-06

1E-05

1E-04

1E-03

1E-02

Avalanche time, tp (s)

Maximum Repetitive Avalanche Current, IAR (A)

125 C

Tj prior to avalanche = 25 C

March 1999

Rev 1.000

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