IRF830 datasheet(2/7 Pages) PHILIPS

2 / 7 page

Philips Semiconductors

Product specification

PowerMOS transistor

IRF830

Avalanche energy rated

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

th j-mb

Thermal resistance junction

K/W

to mounting base

th j-a

Thermal resistance junction

in free air

K/W

to ambient

ELECTRICAL CHARACTERISTICS

j = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

(BR)DSS

Drain-source breakdown

GS = 0 V; ID = 0.25 mA

500

voltage

∆V

(BR)DSS / Drain-source breakdown

DS = VGS; ID = 0.25 mA

0.1

%/K

∆T

voltage temperature

coefficient

DS(ON)

Drain-source on resistance

GS = 10 V; ID = 3 A

1.2

1.5

Ω

GS(TO)

Gate threshold voltage

DS = VGS; ID = 0.25 mA

2.0

3.0

4.0

Forward transconductance

DS = 30 V; ID = 3 A

3.6

DSS

Drain-source leakage current V

DS = 500 V; VGS = 0 V

µA

DS = 400 V; VGS = 0 V; Tj = 125 ˚C

250

µA

GSS

Gate-source leakage current V

GS = ±30 V; VDS = 0 V

200

g(tot)

Total gate charge

D = 6 A; VDD = 400 V; VGS = 10 V

Gate-source charge

Gate-drain (Miller) charge

d(on)

Turn-on delay time

DD = 250 V; RD = 39 Ω;

Turn-on rise time

G = 12 Ω

-33

d(off)

Turn-off delay time

Turn-off fall time

Internal drain inductance

Measured from tab to centre of die

3.5

Internal drain inductance

Measured from drain lead to centre of die

4.5

Internal source inductance

Measured from source lead to source

7.5

bond pad

iss

Input capacitance

GS = 0 V; VDS = 25 V; f = 1 MHz

610

oss

Output capacitance

rss

Feedback capacitance

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

j = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

Continuous source current

mb = 25˚C

5.9

(body diode)

Pulsed source current (body

mb = 25˚C

diode)

Diode forward voltage

S = 6 A; VGS = 0 V

1.2

Reverse recovery time

S = 6 A; VGS = 0 V; dI/dt = 100 A/µs

390

Reverse recovery charge

µC

March 1999

Rev 1.000

IRF830 Folha de dados(PDF) 2 Page - NXP Semiconductors

IRF830 Folha de dados(HTML) 2 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7

Folha de dados Download

Ligação URL