IRF830 datasheet(1/7 Pages) PHILIPS

Nome de Peças	IRF830

Descrição Electrónicos	PowerMOS transistor Avalanche energy rated

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Philips Semiconductors

Product specification

PowerMOS transistor

IRF830

Avalanche energy rated

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching

V

DSS = 500 V

• High thermal cycling performance

• Low thermal resistance

I

D = 5.9 A

R

DS(ON) ≤ 1.5 Ω

GENERAL DESCRIPTION

PINNING

SOT78 (TO220AB)

N-channel,

enhancement

mode

DESCRIPTION

field-effect

power

transistor,

intended for use in off-line switched

1

gate

mode power supplies, T.V. and

computer monitor power supplies,

2

drain

d.c. to d.c. converters, motor control

circuits

and

general

purpose

3

source

switching applications.

tab

drain

The IRF830 is supplied in the

SOT78 (TO220AB) conventional

leaded package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DSS

Drain-source voltage

T

j = 25 ˚C to 150˚C

-

500

V

DGR

Drain-gate voltage

T

j = 25 ˚C to 150˚C; RGS = 20 kΩ

-

500

V

GS

Gate-source voltage

-

± 30

V

I

D

Continuous drain current

T

mb =

25 ˚C; V

GS = 10 V

-

5.9

A

T

mb = 100 ˚C; VGS = 10 V

-

3.7

A

I

DM

Pulsed drain current

T

mb = 25 ˚C

-

24

A

P

D

Total dissipation

T

mb = 25 ˚C

-

125

W

T

j, Tstg

Operating junction and

- 55

150

˚C

storage temperature range

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

E

AS

Non-repetitive avalanche

Unclamped inductive load, I

AS = 4.2 A;

-

287

mJ

energy

t

p = 0.21 ms; Tj prior to avalanche = 25˚C;

V

DD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer

to fig:17

E

AR

Repetitive avalanche energy

1

I

AR = 5.9 A; tp = 2.5 µs; Tj prior to

-

10

mJ

avalanche = 25˚C; R

GS = 50 Ω; VGS = 10 V;

refer to fig:18

I

AS, IAR

Repetitive and non-repetitive

-

5.9

A

avalanche current

d

g

s

12 3

tab

1 pulse width and repetition rate limited by T

j max.

March 1999

1

Rev 1.000

Nº de peça semelhante - IRF830

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	IRF830	92Kb / 8P	N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET Aug-1998
Transys Electronics	IRF830	282Kb / 3P	N-CHANNEL ENHANCEMENT MODE
Fairchild Semiconductor	IRF830	141Kb / 6P	N-Channel Power MOSFETs, 4.5 A, 450V/500V
Intersil Corporation	IRF830	56Kb / 7P	4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET July 1999
List of Unclassifed Man...	IRF830	40Kb / 3P	POWER MOSFET

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