Philips Semiconductors

Product specification

PowerMOS transistor

IRF830

Avalanche energy rated

MECHANICAL DATA

Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)

Notes

1. This product is supplied in anti-static packaging. The gate-source input must be protected against static

discharge during transport or handling.

2. Refer to mounting instructions for SOT78 (TO220AB) package.

3. Epoxy meets UL94 V0 at 1/8".

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

SOT78

TO-220

D

D1

q

P

L

12

3

L2

(1)

b1

e

e

b

0

5

10 mm

scale

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220

SOT78

DIMENSIONS (mm are the original dimensions)

A

E

A1

c

Note

1. Terminals in this zone are not tinned.

Q

L1

UNIT

A1

b1

D1

e

P

mm

2.54

qQ

A

b

D

c

L2

(1)

max.

3.0

3.8

3.6

15.0

13.5

3.30

2.79

3.0

2.7

2.6

2.2

0.7

0.4

15.8

15.2

0.9

0.7

1.3

1.0

4.5

4.1

1.39

1.27

6.4

5.9

10.3

9.7

L1

E

L

97-06-11

March 1999

6

Rev 1.000