IRF830 datasheet(3/7 Pages) PHILIPS

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Philips Semiconductors

Product specification

PowerMOS transistor

IRF830

Avalanche energy rated

Fig.1. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25 ˚C = f(Tmb)

Fig.2. Normalised continuous drain current.

ID% = 100

⋅I

D/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V

Fig.3. Safe operating area. T

mb = 25 ˚C

D & IDM = f(VDS); IDM single pulse; parameter tp

Fig.4. Transient thermal impedance.

th j-mb = f(t); parameter D = tp/T

Fig.5. Typical output characteristics.

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance.

DS(ON) = f(ID); parameter VGS

100

120

140

Tmb / C

PD%

Normalised Power Derating

120

110

100

1ms

0.001

0.01

0.1

PHP3N60

Zth j-mb, Transient thermal impedance (K/W)

1us

10us

100us

10ms

100ms

tp, pulse width (s)

D =

D = 0.5

0.2

0.05

0.02

single pulse

0.1

100

120

140

Tmb / C

ID%

Normalised Current Derating

120

110

100

6.5 V

10 V

PHP4N50

VDS, Drain-Source voltage (Volts)

ID, Drain current (Amps)

5 V

5.5 V

6 V

7 V

VGS = 4.5 V

Tj = 25 C

100

1000

10000

0.1

100

PHP4N50

VDS, Drain-source voltage (Volts)

ID, Drain current (Amps)

100 us

1 ms

10 ms

RDS(ON)

VDS/ID

tp = 10 us

PHP4N50

5 V

5.5 V

10 V

ID, Drain current (Amps)

RDS(on), Drain-Source on resistance (Ohms)

4.5 V

VGS = 6 V

Tj = 25 C

6.5 V

7 V

March 1999

Rev 1.000

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