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IRF830 Datasheet with Chat AI
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  • Part No.IRF830
    ManufacturerPHILIPS
    Size58 Kbytes
    Pages7 pages
    DescriptionPowerMOS transistor Avalanche energy rated
    Datasheet Summary with AI

    ## Summary of the Philips SOT78 (TO220AB) PowerMOS Transistor Data Sheet

    This document is a detailed data sheet for a PowerMOS transistor (likely the IRF830, though not explicitly stated). It provides a comprehensive overview of the device's characteristics, specifications, and application considerations. Here's a breakdown of the key information:

    Key Features & Specifications:

    ️· Type: N-Channel PowerMOS transistor
    ️· Package: SOT78 (TO220AB) – a 3-lead, heatsink-mountable plastic package.
    ️· Voltage/Current Ratings: (Specific values would be found in the "Characteristics" section, not fully detailed in this summary, but implied for high power applications.) Designed for switching and amplification in high-power applications.
    ️· Avalanche Capability: Specifically highlights its ability to withstand high-energy transient events (avalanche mode) and provides data on both repetitive and non-repetitive avalanche current limits. This is a key feature for inductive load switching.
    ️· Switching Performance: Includes data on turn-on/off times, rise/fall times, and their dependence on gate resistance.
    ️· Thermal Characteristics: Provides data for calculating thermal resistance and ensuring proper heatsinking.
    ️· Source-Drain Diode Characteristics: Includes a specification for the diode characteristics of the power transistor.

    Key Data Sheet Sections:

    ️· Electrical Characteristics: Tables detailing the device's electrical parameters (voltages, currents, resistances, capacitances) under various test conditions.
    ️· Limiting Values: Absolute maximum ratings to prevent device damage.
    ️· Thermal Characteristics: Parameters for thermal management (junction-to-case resistance, etc.).
    ️· Switching Characteristics: Timing parameters for switching applications.
    ️· Avalanche Characteristics: Critical data for applications with inductive loads.
    ️· Package Outline: Mechanical dimensions of the SOT78 package.
    ️· Definitions: Explanations of data sheet terminology and status.
    ️· Legal Disclaimers: Statements regarding life support applications and liability.


    Target Applications:

    This transistor is suitable for high-power switching applications such as:

    ️· Motor Control: Driving inductive loads in motor control circuits.
    ️· Power Supplies: Switching elements in DC-DC converters and other power supply designs.
    ️· High-Current Switching: Applications requiring high-current switching capability.
    ️· Inductive Load Switching: Particularly well-suited for circuits with inductive loads due to its avalanche capability.

    Important Notes:

    ️· The datasheet emphasizes the need for proper heatsinking to maintain reliable operation.
    ️· It includes a disclaimer about not using the device in life-support applications.
    ️· It highlights the importance of anti-static handling to protect the device.

    ## Summary of the Philips SOT78 (TO220AB) PowerMOS Transistor Data Sheet

    This document is a detailed data sheet for a PowerMOS transistor (likely the IRF830, though not explicitly stated). It provides a comprehensive overview of the device's characteristics, specifications, and application considerations. Here's a breakdown of the key information:

    Key Features & Specifications:

    ️· Type: N-Channel PowerMOS transistor
    ️· Package: SOT78 (TO220AB) – a 3-lead, heatsink-mountable plastic package.
    ️· Voltage/Current Ratings: (Specific values would be found in the "Characteristics" section, not fully detailed in this summary, but implied for high power applications.) Designed for switching and amplification in high-power applications.
    ️· Avalanche Capability: Specifically highlights its ability to withstand high-energy transient events (avalanche mode) and provides data on both repetitive and non-repetitive avalanche current limits. This is a key feature for inductive load switching.
    ️· Switching Performance: Includes data on turn-on/off times, rise/fall times, and their dependence on gate resistance.
    ️· Thermal Characteristics: Provides data for calculating thermal resistance and ensuring proper heatsinking.
    ️· Source-Drain Diode Characteristics: Includes a specification for the diode characteristics of the power transistor.

    Key Data Sheet Sections:

    ️· Electrical Characteristics: Tables detailing the device's electrical parameters (voltages, currents, resistances, capacitances) under various test conditions.
    ️· Limiting Values: Absolute maximum ratings to prevent device damage.
    ️· Thermal Characteristics: Parameters for thermal management (junction-to-case resistance, etc.).
    ️· Switching Characteristics: Timing parameters for switching applications.
    ️· Avalanche Characteristics: Critical data for applications with inductive loads.
    ️· Package Outline: Mechanical dimensions of the SOT78 package.
    ️· Definitions: Explanations of data sheet terminology and status.
    ️· Legal Disclaimers: Statements regarding life support applications and liability.


    Target Applications:

    This transistor is suitable for high-power switching applications such as:

    ️· Motor Control: Driving inductive loads in motor control circuits.
    ️· Power Supplies: Switching elements in DC-DC converters and other power supply designs.
    ️· High-Current Switching: Applications requiring high-current switching capability.
    ️· Inductive Load Switching: Particularly well-suited for circuits with inductive loads due to its avalanche capability.

    Important Notes:

    ️· The datasheet emphasizes the need for proper heatsinking to maintain reliable operation.
    ️· It includes a disclaimer about not using the device in life-support applications.
    ️· It highlights the importance of anti-static handling to protect the device.

    Part No.IRF830
    ManufacturerPHILIPS
    Size58 Kbytes
    Pages7 pages
    DescriptionPowerMOS transistor Avalanche energy rated
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