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## Summary of the Philips SOT78 (TO220AB) PowerMOS Transistor Data Sheet
This document is a detailed data sheet for a PowerMOS transistor (likely the IRF830, though not explicitly stated). It provides a comprehensive overview of the device's characteristics, specifications, and application considerations. Here's a breakdown of the key information:
Key Features & Specifications:
️· Type: N-Channel PowerMOS transistor
️· Package: SOT78 (TO220AB) – a 3-lead, heatsink-mountable plastic package.
️· Voltage/Current Ratings: (Specific values would be found in the "Characteristics" section, not fully detailed in this summary, but implied for high power applications.) Designed for switching and amplification in high-power applications.
️· Avalanche Capability: Specifically highlights its ability to withstand high-energy transient events (avalanche mode) and provides data on both repetitive and non-repetitive avalanche current limits. This is a key feature for inductive load switching.
️· Switching Performance: Includes data on turn-on/off times, rise/fall times, and their dependence on gate resistance.
️· Thermal Characteristics: Provides data for calculating thermal resistance and ensuring proper heatsinking.
️· Source-Drain Diode Characteristics: Includes a specification for the diode characteristics of the power transistor.
Key Data Sheet Sections:
️· Electrical Characteristics: Tables detailing the device's electrical parameters (voltages, currents, resistances, capacitances) under various test conditions.
️· Limiting Values: Absolute maximum ratings to prevent device damage.
️· Thermal Characteristics: Parameters for thermal management (junction-to-case resistance, etc.).
️· Switching Characteristics: Timing parameters for switching applications.
️· Avalanche Characteristics: Critical data for applications with inductive loads.
️· Package Outline: Mechanical dimensions of the SOT78 package.
️· Definitions: Explanations of data sheet terminology and status.
️· Legal Disclaimers: Statements regarding life support applications and liability.
Target Applications:
This transistor is suitable for high-power switching applications such as:
️· Motor Control: Driving inductive loads in motor control circuits.
️· Power Supplies: Switching elements in DC-DC converters and other power supply designs.
️· High-Current Switching: Applications requiring high-current switching capability.
️· Inductive Load Switching: Particularly well-suited for circuits with inductive loads due to its avalanche capability.
Important Notes:
️· The datasheet emphasizes the need for proper heatsinking to maintain reliable operation.
️· It includes a disclaimer about not using the device in life-support applications.
️· It highlights the importance of anti-static handling to protect the device.
## Summary of the Philips SOT78 (TO220AB) PowerMOS Transistor Data Sheet
This document is a detailed data sheet for a PowerMOS transistor (likely the IRF830, though not explicitly stated). It provides a comprehensive overview of the device's characteristics, specifications, and application considerations. Here's a breakdown of the key information:
Key Features & Specifications:
️· Type: N-Channel PowerMOS transistor
️· Package: SOT78 (TO220AB) – a 3-lead, heatsink-mountable plastic package.
️· Voltage/Current Ratings: (Specific values would be found in the "Characteristics" section, not fully detailed in this summary, but implied for high power applications.) Designed for switching and amplification in high-power applications.
️· Avalanche Capability: Specifically highlights its ability to withstand high-energy transient events (avalanche mode) and provides data on both repetitive and non-repetitive avalanche current limits. This is a key feature for inductive load switching.
️· Switching Performance: Includes data on turn-on/off times, rise/fall times, and their dependence on gate resistance.
️· Thermal Characteristics: Provides data for calculating thermal resistance and ensuring proper heatsinking.
️· Source-Drain Diode Characteristics: Includes a specification for the diode characteristics of the power transistor.
Key Data Sheet Sections:
️· Electrical Characteristics: Tables detailing the device's electrical parameters (voltages, currents, resistances, capacitances) under various test conditions.
️· Limiting Values: Absolute maximum ratings to prevent device damage.
️· Thermal Characteristics: Parameters for thermal management (junction-to-case resistance, etc.).
️· Switching Characteristics: Timing parameters for switching applications.
️· Avalanche Characteristics: Critical data for applications with inductive loads.
️· Package Outline: Mechanical dimensions of the SOT78 package.
️· Definitions: Explanations of data sheet terminology and status.
️· Legal Disclaimers: Statements regarding life support applications and liability.
Target Applications:
This transistor is suitable for high-power switching applications such as:
️· Motor Control: Driving inductive loads in motor control circuits.
️· Power Supplies: Switching elements in DC-DC converters and other power supply designs.
️· High-Current Switching: Applications requiring high-current switching capability.
️· Inductive Load Switching: Particularly well-suited for circuits with inductive loads due to its avalanche capability.
Important Notes:
️· The datasheet emphasizes the need for proper heatsinking to maintain reliable operation.
️· It includes a disclaimer about not using the device in life-support applications.
️· It highlights the importance of anti-static handling to protect the device.
| Part No. | IRF830 |
| Manufacturer | PHILIPS |
| Size | 58 Kbytes |
| Pages | 7 pages |
| Description | PowerMOS transistor Avalanche energy rated |
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