A6985F datasheet(9/77 Pages) STMICROELECTRONICS

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A6985F

Electrical characteristics

Power consumption

ISHTDWN Shutdown current from VIN

VSS/INH = GND

A

IQ OPVIN Quiescent current from VIN

LCM - SWO

VREF < VFB < VOVP (SLEEP)

VBIAS = 3.3 V

(3)

410

A

LCM - NO SWO

VREF < VFB < VOVP (SLEEP)

VBIAS = GND

(3)

120

LNM - SWO

VFB = GND (NO SLEEP)

VBIAS = 3.3 V

0.5

1.5

LNM - NO SWO

VFB = GND (NO SLEEP)

VBIAS = GND

22.8

IQ OPVBIAS Quiescent current from VBIAS

LCM - SWO

VREF < VFB < VOVP (SLEEP)

VBIAS = 3.3 V

(3)

115

A

LNM - SWO

VFB = GND (NO SLEEP)

VBIAS = 3.3 V

0.5

1.25mA

Soft-start

VINH

VSS threshold

SS rising

200

460

700

VINH HYST VSS hysteresis

100

140

ISS CH

CSS charging current

VSS < VINH OR

t < TSS SETUP OR

VEA+ > VFB

(2)

A

t > TSS SETUP AND

VEA+ < VFB

(2)

VSS START

Start of internal error amplifier

ramp

0.995

1.1

1.150

SSGAIN

SS/INH to internal error

amplifier gain

Error amplifier

VOUT

Voltage feedback

3.3 V (A6985F3V3)

3.25

3.3

3.35

5 V (A6985F5V)

4.925

5.0

5.075

A6985F

0.841 0.85

0.859

IVOUT

VOUT biasing current

3.3 V (A6985F3V3)

8.5

A

5 V (A6985F5V)

7.5

13.5

A6985F

500

Table 5. Electrical characteristics (continued)

Symbol

Parameter

Test condition

Note Min.

Typ.

Max.

Unit

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