P-DIP-8-4

P-DSO-8-3

1/2 Kbit (128/256

× 8bit) Serial CMOS

SLx 24C01/02/P

Semiconductor Group

3

1998-07-27

Features

• Data EEPROM internally organized as

128/256 bytes and 16/32 pages

× 8bytes

• Page protection mode, flexible page-by-page

hardware write protection

– Additional protection EEPROM of 16/32 bits,

1 bit per data page

– Protection setting for each data page by writing its

protection bit

– Protection management without switching WP pin

• Low power CMOS

•

V

• Two wire serial interface bus, I

compatible

• Filtered inputs for noise suppression with

Schmitt trigger

• Clock frequency up to 400 kHz

• High programming flexibility

– Internal programming voltage

– Self timed programming cycle including erase

– Byte-write and page-write programming, between 1 and 8 bytes

– Typical programming time 5 ms for up to 8 bytes

• High reliability

– Endurance 10

– Data retention 40 years

1)

– ESD protection 4000 V on all pins

• 8 pin DIP/DSO packages

• Available for extended temperature ranges

– Industrial:

− 40 °C to + 85 °C

– Automotive:

− 40 °C to + 125 °C

1)

Values are temperature dependent, for further information please refer to your Siemens Sales office.