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SLA24C01-S/P Folha de dados(PDF) 12 Page - Siemens Semiconductor Group |
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SLA24C01-S/P Folha de dados(HTML) 12 Page - Siemens Semiconductor Group |
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12 / 27 page ![]() SLx 24C01/02/P Semiconductor Group 12 1998-07-27 5.2 Page Write Those bytes of the page that have not been addressed are not included in the programming. Figure 8 Page Write Sequence The erase/write cycle is finished latest after 8 ms. Acknowledge polling may be used for speed enhancement in order to indicate the end of the erase/write cycle (refer to chapter 5.3 Acknowledge Polling). Address Setting Thepagewrite procedureisthe same as thebytewrite procedure up to the first data byte. In a page write instruction however, entry of the EEPROM address byte EEA is followed by a sequence of one to maximum eight data bytes with the new data to be programmed. These bytes are transferred to the internal page buffer of the EEPROM. Transmission of Data The first entered data byte will be stored according to the EEPROM address n given by EEA (A0 to A6 or A7). The internal address counter is incremented automatically after the entered data byte has been acknowledged. The next data byte is then stored at the next higher EEPROM address. EEPROM addresses within the same page have common page address bits A2 through A6 or A7. Only the respective three least significant address bits A0 through A2 are incremented, as all data bytes to be programmed simultaneously have to be within the same page. Programming Cycle The master stops data entry by applying a STOP condition, which also starts the internally timed erase/write cycle. In the first step, all selected bytes are erased to “1”. With the next internal step, the addressed bytes are written according to the contents of the page buffer. Command Byte CSW S P C K A S T A R T T P O S EEPROM Address EEA n Data Byte n Data Byte n+1 Data Byte n+7 Bus Activity Master SDA Line Bus Activity EEPROM IED02280 0 C K A C K A C K A C K A |
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