| Os motores de busca de Datasheet de Componentes eletrônicos |
|
AP12H02TS Folha de dados(PDF) 5 Page - A POWER MICROELECTRONICS |
|
|
|||||||||||||||||||||||||||||
AP12H02TS Folha de dados(HTML) 5 Page - A POWER MICROELECTRONICS |
|
5 / 7 page ![]() AP12H02TS 20V N+N-Channel Enhancement Mode MOSFET AP12H02TS Rve:3.8 Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 0 4 8 12 16 20 24 0 50 100 150 T C , Case Temperature( o C) 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) I D =1mA 0 20 40 60 80 0 1020 3040 50 I D , Drain Current (A) T j =25 o C 2.5V V GS =4.5V . 永源微電子科技有限公司 |
|
|
Ligação URL |
| ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | Link para a ficha técnica | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |