AP12H02TS datasheet(1/7 Pages) APME

Nome de Peças	AP12H02TS

Descrição Electrónicos	20V NN-Channel Enhancement Mode MOSFET

PDF	7 Pages

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Fabricante Electrônico	APME [A POWER MICROELECTRONICS]

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AP12H02TS

20V N+N-Channel Enhancement Mode MOSFET

AP12H02TS Rve:3.8

Description

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-Source Voltage

V

ID@TC=25

℃

Drain Current, VGS @ 4.5V

12

A

ID@TC=100

℃

Drain Current, VGS @ 4.5V

7

A

ID@TA=25

℃

Drain Current, VGS @ 4.5V3

10

A

ID@TA=70

℃

Drain Current, VGS @ 4.5V3

8.5

A

IDM

Pulsed Drain Current1

80

A

PD@TC=25

℃

Total Power Dissipation

15.6

W

PD@TA=25

℃

Total Power Dissipation3

5

W

EAS

Single Pulse Avalanche Energy4

7.2

mJ

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Rthj-c

Maximum Thermal Resistance, Junction-case

8

℃/W

Rthj-a

Maximum Thermal Resistance, Junction-ambient3

25

℃/W

The AP12H02TS uses advanced trench

technology to provide excellent RDS(ON) and low gate

charge . The complementary MOSFETs may be used to

form a level shifted high side switch, and for a host of other

applications

General Features

N-Channel

VDS = 20V,ID =12A

RDS(ON) < 12.5mΩ@ VGS=4.5V

N-Channel

VDS = 20V,ID =12A

RDS(ON) < 12.5mΩ@ VGS=4.5V

High power and current handing capability

Lead free product is acquired

Surface mount package

Application

● Power switching application

● Hard Switched and High Frequency Circuits

● Uninterruptible Power Supply

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

永源微電子科技有限公司

±1

2

Nº de peça semelhante - AP12H02TS

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