AP12H02TS datasheet(2/7 Pages) APME

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AP12H02TS

20V N+N-Channel Enhancement Mode MOSFET

AP12H02TS Rve:3.8

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ.

Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

RDS(ON)

Static Drain-Source On-

Resistance2

12.5

mΩ

VGS=2.5V, ID=12A

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

0.5

1.2

gfs

Forward Transconductance

VDS=5V, ID=20A

IDSS

Drain-Source Leakage Current

VDS=16V, VGS=0V

IGSS

Gate-Source Leakage

Total Gate Charge

ID=20A

VDS=10V

VGS=4.5V

25.6

Qgs

Gate-Source Charge

Qgd

Gate-Drain ("Miller") Charge

4.5

td(on)

Turn-on Delay Time

VDS=10V

ID=1A

RG=3.3Ω

VGS=5V

Rise Time

td(off)

Turn-off Delay Time

Fall Time

Ciss

Input Capacitance

VGS=0V

VDS=10V

f=1.0MHz

1400 2240

Coss

Output Capacitance

170

Crss

Reverse Transfer Capacitance

135

Gate Resistance

f=1.0MHz

VSD

Forward On Voltage2

IS=20A, VGS=0V

1.2

trr

Reverse Recovery Time

IS=12A,

VGS=0V,

dI/dt=100A/µs

8.5

Qrr

Reverse Recovery Charge

2.5

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 60

℃/W at steady state.

4.Starting Tj=25oC , VDD=20V , L=0.1mH , RG=25Ω, VGS=10V

VGS=4.5V, ID=12A

永源微電子科技有限公司

VGS=±12V, VDS=0V

100

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