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AP12H02TS Folha de dados(PDF) 3 Page - A POWER MICROELECTRONICS

Nome de Peças AP12H02TS
Descrição Electrónicos  20V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Fabricante Electrônico  APME [A POWER MICROELECTRONICS]
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AP12H02TS Folha de dados(HTML) 3 Page - A POWER MICROELECTRONICS

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AP12H02TS
20V N+N-Channel Enhancement Mode MOSFET
AP12H02TS Rve:3.8
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
20
40
60
80
012
3456
V DS , Drain-to-Source Voltage (V)
T C =25
o C
5.0V
4.5V
3.5V
2.5V
V G = 2.0V
0
10
20
30
40
50
012
34
V DS , Drain-to-Source Voltage (V)
5.0V
4.5V
3.5V
2.5V
V G = 2.0V
T C = 150
o C
8
10
12
14
16
18
123
456
V GS , Gate-to-Source Voltage (V)
I D =12A
T C =25
o C
0.4
0.8
1.2
1.6
2.0
2.4
-100
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D =20 A
V G = 4.5 V
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
T j =25
o C
T j =150
o C
0.0
0.4
0.8
1.2
1.6
2.0
-100
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D =1mA
.
永源微電子科技有限公司



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