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MS85RS1MTY Folha de dados(PDF) 1 Page - RAMXEED LIMITED |
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MS85RS1MTY Folha de dados(HTML) 1 Page - RAMXEED LIMITED |
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1 / 43 page  Copyright 2024 RAMXEED LIMITED Fujitsu Semiconductor Memory Solutions Limited has changed its name to RAMXEED Limited. RAMXEED Limited will continue to offer and support existing products while maintaining Fujitsu's part number unchanged. Memory FeRAM 1M (128K 8) Bit SPI MS85RS1MTY(AEC-Q100 Compliant) DESCRIPTION MS85RS1MTY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automobile applications. MS85RS1MTY adopts the Serial Peripheral Interface (SPI). The MS85RS1MTY is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MS85RS1MTY can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. As MS85RS1MTY does not need any waiting time in writing process, the write cycle time of MS85RS1MTY is much shorter than that of Flash memories or E2PROM. FEATURES • Bit configuration : 131,072 words 8 bits • Special Sector Region : 256 words 8 bits In this region, data storage after (by) three times reflow based on JEDEC MSL-3 standard condition is guaranteed. • Unique ID • Serial Number : 64 bits In this region, data storage after (by) three times reflow based on JEDEC MSL-3 standard condition is guaranteed. • Serial Peripheral Interface : SPI (Serial Peripheral Interfaces) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1) • Operating frequency : 50 MHz (Max) • High endurance : 1013 times (+125 C), • Data retention : 70.4 years (+85 C), 19.1 years (+105 C), 5.9 years (+125 C) or more Under evaluation for more than 5.9 years(+125 C) • Operating power supply voltage : 1.8 V to 3.6 V • Low power consumption : Operating power supply current 4mA (Max@50 MHz) Standby current 150A (Max) Deep Power Down current 30A (Max) Hibernate current 10A (Max) • Operation ambient temperature range : 40 C to +125 C • Package 8-pin plastic SOP (150mil) 8-pin plastic DFN (5mm x 6mm) RoHS compliant DS501-00096-1v0-E |
Nº de peça semelhante - MS85RS1MTY |
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Descrição semelhante - MS85RS1MTY |
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