 DESCRIPTIONS
The MS85R4M1TA is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.
The MS85R4M1TA is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MS85R4M1TA can be used for 1014 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MS85R4M1TA uses a pseudo-SRAM interface.
 FEATURES
• Bit configuration : 524,288 words × 8 bits
• Read/write endurance : 1014 times ( + 85 °C), 1013 times ( + 105 °C),
• Data retention : 10 years ( + 105 °C), 40 years ( + 85 °C), over 200 years ( + 35 °C)
• Operating power supply voltage : 1.8 V to 3.6 V
• Low power operation : Operating power supply current 16 mA (Max)
Standby current 150 μA (Max)
Sleep current 12 μA (Max)
• Operation ambient temperature range : − 40 °C to + 105 °C
• Package : 44-pin plastic TSOP
RoHS compliant