DESCRIPTION
MS85RS1MTY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072
words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming
the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such
as automobile applications.
MS85RS1MTY adopts the Serial Peripheral Interface (SPI).
The MS85RS1MTY is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MS85RS1MTY can be used for 1013 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
As MS85RS1MTY does not need any waiting time in writing process, the write cycle time of MS85RS1MTY
is much shorter than that of Flash memories or E2PROM.
FEATURES
• Bit configuration : 131,072 words  8 bits
• Special Sector Region : 256 words  8 bits
In this region, data storage after (by) three times reflow based on
JEDEC MSL-3 standard condition is guaranteed.
• Unique ID
• Serial Number : 64 bits
In this region, data storage after (by) three times reflow based on
　　　　　　　　　　　　　　　　　JEDEC MSL-3 standard condition is guaranteed.
• Serial Peripheral Interface : SPI (Serial Peripheral Interfaces)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
• Operating frequency : 50 MHz (Max)
• High endurance : 1013 times (+125 C),
• Data retention : 70.4 years (+85 C),
19.1 years (+105 C),
5.9 years (+125 C) or more
Under evaluation for more than 5.9 years(+125 C)
• Operating power supply voltage : 1.8 V to 3.6 V
• Low power consumption : Operating power supply current 4mA (Max@50 MHz)
Standby current 150A (Max)
Deep Power Down current 30A (Max)
Hibernate current 10A (Max)
• Operation ambient temperature range :  40 C to +125 C
• Package 8-pin plastic SOP (150mil)
8-pin plastic DFN (5mm x 6mm)
RoHS compliant