MS85RC1MTY datasheet(1/37 Pages) RAMXEED

Nome de Peças	MS85RC1MTY

Descrição Electrónicos	1M (128 K  8) Bit I2C

PDF	37 Pages

Scroll/Zoom	100%

Fabricante Electrônico	RAMXEED [RAMXEED LIMITED]

Página de início	https://www.ramxeed.com/

Logo

1 / 37 page

Fujitsu Semiconductor Memory Solutions Limited has changed its name to RAMXEED Limited.

RAMXEED Limited will continue to offer and support existing products while maintaining Fujitsu's

part number unchanged.

Memory FeRAM

1M (128 K  8) Bit I2C

MS85RC1MTY(AEC-Q100 Compliant)



DESCRIPTION

The MS85RC1MTY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072

words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

Unlike SRAM, the MS85RC1MTY is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MS85RC1MTY has improved to be

at least 1013 cycles, significantly outperforming other nonvolatile memory products in the number.

The MS85RC1MTY does not need a polling sequence after writing to the memory such as the case of Flash

memory or E2PROM.



FEATURES

• Bit configuration

: 131,072 words  8 bits

• Two-wire serial interface

: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).

• Operating frequency

: 3.4 MHz (Max @HIGH SPEED MODE)

1 MHz (Max @FAST MODE PLUS)

• Read/write endurance

: 1013 times (  125 C)

• Data retention

: 70.4 years (  85 C),

19.1 years (  105 C),

5.9 years (  125 C)

• Operating power supply voltage: 1.8 V to 3.6 V

• Low-power consumption

: Operating power supply current 0.24mA (Typ @3.4 MHz)

0.4 mA (Max @3.4 MHz)

Standby current 12μA (Typ), 150μA (Max)

Sleep current

0.3μA (Typ), 16μA (Max)

• Operation ambient temperature range

:  40 C to  125 C

• Package

: 8-pin plastic SOP (150mil)

8-pin plastic DFN (5mm  6mm)

RoHS compliant

DS501-00095-0v1-E

Nº de peça semelhante - MS85RC1MTY

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
RAMXEED LIMITED	MS85R4M1TA	960Kb / 25P	4 M (512 K × 8) Bit
	MS85R4M1TAFN-G-JAE2	960Kb / 25P	4 M (512 K × 8) Bit
	MS85R4M2TA	985Kb / 26P	4 M (256 K × 16) Bit
	MS85R4M2TAFN-G-JAE2	985Kb / 26P	4 M (256 K × 16) Bit
	MS85RS1MTY	2Mb / 43P	1M (128K X 8) Bit SPI

More results

Descrição semelhante - MS85RC1MTY

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
fujitsu semiconductor	MB85RC128	142Kb / 20P	Memory FRAM 128 K (16 K x 8) Bit I2C
	MB85RS1MT	510Kb / 36P	1M (128 K 횞 8) ?볝긿?늆PI
	MB85RC16VPNF-G	306Kb / 29P	16 K (2 K 횞 8) Bit I2C
	MB85RC64APNF-G	287Kb / 28P	64 K (8 K 횞 8) Bit I2C
	MB85RC64PNF-G	143Kb / 20P	64 K (8 K 횞 8) Bit I2C
	MB85RC64TAPNF-G	200Kb / 27P	64 K (8 K 횞 8) Bit I2C
	MB85RC256VPNF-G	317Kb / 28P	256 K (32 K 횞 8) Bit I2C
	MB85RS1MTPH-G	426Kb / 28P	1M (128 K 횞 8) Bit SPI
	MB85RS1MTPNF-G	426Kb / 28P	1M (128 K 횞 8) Bit SPI
	MB85RS1MTPW-G	426Kb / 28P	1M (128 K 횞 8) Bit SPI

More results

MS85RC1MTY Folha de dados(PDF) 1 Page - RAMXEED LIMITED

MS85RC1MTY Folha de dados(HTML) 1 Page - RAMXEED LIMITED

Nº de peça semelhante - MS85RC1MTY

Descrição semelhante - MS85RC1MTY

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37

Folha de dados Download

Ligação URL