S32K311NHT0MPAST datasheet(74/143 Pages) NXP

74 / 143 page

Table 30. Flash memory Array Integrity and Margin Read specifications (continued)

Symbol

Characteristic

Min

Typical

Max1 2

Units3

tai512kseq

Array Integrity time and Margin

Read time for sequential sequence

on 512KB block.

—

16384 x Tperiod x Nread

(plus 40uS adder required if User

Margin Read)

—

tai1mseq

Array Integrity time and Margin

Read time for sequential sequence

on 1MB block.

—

32768 x Tperiod x Nread

(plus 40uS adder required if User

Margin Read)

—

tai2mseq

Array Integrity time and Margin

Read time for sequential sequence

on 2MB block.

—

65536 x Tperiod x Nread

(plus 40uS adder required if User

Margin Read)

—

tai256kprop

Array Integrity time for proprietary

sequence on 256KB block.

—

106496

x Tperiod x Nread

—

tai512kprop

Array Integrity time for proprietary

sequence on 512KB block.

—

229376

x Tperiod x Nread

—

tai1mprop

Array Integrity time for proprietary

sequence on 1MB block.

—

491520

x Tperiod x Nread

—

tai2mprop

Array Integrity time for proprietary

sequence on 2MB block.

—

1048576

x Tperiod x Nread

—

1. Array Integrity times need to be calculated and is dependent on system frequency and number of clocks per read. The

equation presented require Tperiod (which is the unit accurate period, thus for 200 MHz, Tperiod would equal 5e-9) and

Nread (which is the number of clocks required for read, including single read, dual read, quad read contribution. Thus for a

read setup that requires 6 clocks to read Nread would equal 6.

2. Array Integrity times are actual hardware execution times and do not include software overhead or system code execution

overhead.

3. The units for Array Integrity are determined by the period of the system clock. If unit accurate period is used in the

equation, the results of the equation are also unit accurate.

9.3 Flash memory module life specifications

Table 31. Flash memory module life specifications

Symbol

Characteristic

Conditions

Min

Typical

Units

Array P/E

cycles

Number of program/erase cycles per block

for 256 KB and 512 KB blocks using

Sector Erase.

—

100,000

—

P/E

cycles

Number of program/erase cycles per block for

1 MB and 2 MB blocks using Sector Erase.

—

1,000

—

P/E

cycles

Number of program/erase cycles per block

using Block Erase1

—

P/E

cycles

Table continues on the next page...

NXP Semiconductors

Flash memory specification

S32K3xx Data Sheet, Rev. 9.1, 03/2024

Data Sheet: Technical Data

Preliminary Information for S32K388

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