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S32K311NHT0MPAST Folha de dados(PDF) 48 Page - NXP Semiconductors |
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S32K311NHT0MPAST Folha de dados(HTML) 48 Page - NXP Semiconductors |
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48 / 143 page ![]() Table 15. STANDBY mode supply currents (continued) S32K312 25, typ 3 40 41 0.887 NA 25, max 4 79 80 1.031 85, typ 3 178 178 1.027 85, max 4 496 497 1.422 105, typ 3 350 346 1.197 105, max 4 994 997 1.924 125, typ 3 620 611 1.457 125, max 4 1788 1792 2.761 S32K311, S32K310 25, typ 3 38.9 39.8 1.365 NA 25, max 4 77.2 79.8 1.823 85, typ 3 144.3 144.9 1.480 85, max 4 491.5 494.8 2.263 105, typ 3 263.8 264.2 1.559 105, max 4 937.4 947.1 2.597 125, typ 3 508.5 510 1.811 125, max 4 1740.1 1760.3 3.488 1. See the configurations in Table 21. 2. IO load current is not included. The actual current requirements for IOs will depend on the I/O configuration in the application. 3. “typ” is indicative of the average current numbers at the nominal internally regulated V11 supply voltage, VDD_HV_A = 5.0V, VDD_HV_B = 5.0V, for the typical silicon process.. 4. “max” is indicative of the maximum current numbers at the maximum internally regulated V11 supply voltage (1.16 V), VDD_HV_A = 5.5V, VDD_HV_B = 5.5V, for the fast silicon process. All data in this table is preliminary and based on first samples. NOTE Typical current numbers are indicative for typical silicon process and may vary based on the silicon distribution and user configuration. Typical conditions assumes VDD_HV_A = VREFH = 5 V, VDD_HV_B = 5V (if the VDD_HV_B domain present in the device), temperature = 25 °C, and typical silicon process unless otherwise stated. NXP Semiconductors Power management S32K3xx Data Sheet, Rev. 9.1, 03/2024 Data Sheet: Technical Data Preliminary Information for S32K388 48 / 143 |
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