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STO67N60M6 Folha de dados(PDF) 4 Page - STMicroelectronics

Nome de Peças STO67N60M6
Descrição Electrónicos  N-channel 600 V, 48 m typ., 34 A MDmesh M6 Power MOSFET in a TO‑LL package
PDF  15 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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STO67N60M6 Folha de dados(HTML) 4 Page - STMicroelectronics

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Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
34
A
ISDM(1)
Source-drain current (pulsed)
-
200
A
VSD(2)
Forward on voltage
VGS = 0 V, ISD = 52 A
-
1.6
V
trr
Reverse recovery time
ISD = 52 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 15. Test circuit for inductive
load switching and diode recovery times)
-
348
ns
Qrr
Reverse recovery charge
-
5.6
µC
IRRM
Reverse recovery current
-
32
A
trr
Reverse recovery time
ISD = 52 A, di/dt = 100 A/µs,
VDD = 60 V, TJ = 150 °C
(see Figure 15. Test circuit for inductive
load switching and diode recovery times)
-
484
ns
Qrr
Reverse recovery charge
-
10.6
µC
IRRM
Reverse recovery current
-
44
A
1. Pulse width is limited by safe operating area.
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
STO67N60M6
Electrical characteristics
DS13208 - Rev 2
page 4/15



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