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STO67N60M6 Folha de dados(PDF) 6 Page - STMicroelectronics

Nome de Peças STO67N60M6
Descrição Electrónicos  N-channel 600 V, 48 m typ., 34 A MDmesh M6 Power MOSFET in a TO‑LL package
PDF  15 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STO67N60M6 Folha de dados(HTML) 6 Page - STMicroelectronics

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Figure 7. Typical capacitance characteristics
GADG131220191115CVR
10 4
10 3
10 2
10 1
10 0
10 -1
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
f = 1 MHz
Ciss
Co ss
Cr ss
Figure 8. Normalized gate threshold vs. temperature
GADG131220191107VTH
1.1
1.0
0.9
0.8
0.7
0.6
-75
-25
25
75
125
VGS(th)
(norm.)
ID = 250 μA
TJ (°C)
Figure 9. Normalized on-resistance vs. temperature
GADG131220191108RON
2.2
1.8
1.4
1.0
0.6
0.2
-75
-25
25
75
125
RDS(on)
(norm.)
VGS = 10 V
TJ (°C)
Figure 10. Normalized breakdown voltage vs temperature
GADG131220191109BDV
1.08
1.04
1.00
0.96
0.92
0.88
-75
-25
25
75
125
V(BR)DSS
(norm.)
ID = 1 mA
Figure 11. Output capacitance stored energy
GADG131220191119EOS
30
25
20
15
10
5
0
0
100 200 300 400 500 600
VDS (V)
EOSS
(μJ)
Figure 12. Typical reverse diode forward characteristics
GADG131220191114SDF
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
10
20
30
40
50
VSD
(V)
ISD (A)
Tj = -50 °C
Tj = 25 °C
Tj = 150 °C
STO67N60M6
Electrical characteristics (curves)
DS13208 - Rev 2
page 6/15



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