STO67N60M6 datasheet(3/15 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. On /off-states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

600

IDSS

Zero-gate voltage drain current

VGS = 0 V, VDS= 600 V

µA

VGS = 0 V, VDS = 600 V, TC = 125 °C(1)

100

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3.25

4.00

4.75

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 26 A

mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0 V, VDS = 100 V, f = 1 MHz

3400

Coss

Output capacitance

280

Crss

Reverse transfer capacitance

Coss eq.(1)

Equivalent output capacitance

VGS = 0 V, VDS = 0 to 480 V

520

Intrinsic gate resistance

f = 1 MHz open drain

1.4

Total gate charge

VDD = 480 V, ID = 52 A, VGS = 0 to 10 V

(see Figure 14. Test circuit for gate

charge behavior)

72.5

Qgs

Gate-source charge

24.5

Qgd

Gate-drain charge

28.5

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td (on)

Turn-on delay time

VDD = 300 V, ID = 26 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13. Switching times

test circuit for resistive load and

Figure 18. Switching time waveform)

24.5

Rise time

td(off)

Turn-off delay time

Fall time

10.5

STO67N60M6

Electrical characteristics

DS13208 - Rev 2

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