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STO67N60M6 Folha de dados(PDF) 5 Page - STMicroelectronics

Nome de Peças STO67N60M6
Descrição Electrónicos  N-channel 600 V, 48 m typ., 34 A MDmesh M6 Power MOSFET in a TO‑LL package
PDF  15 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STO67N60M6 Folha de dados(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GADG191220191139SOA
10 2
10 1
10 0
10 -1
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp =100µs
tp =10µs
tp =1ms
tp =10ms
IDM
V(BR)DSS
Operation
in this
area
is limited
by
R
DS(on)
RDS(on) max.
single pulse
TC = 25 °C
TJ ≤ 150 °C
VGS=10 V
tp =1µs
Figure 2. Maximum transient thermal impedance
GADG191220191258ZTH
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
0.4
0.3
0.2
0.1
0.05
ZthJC
(°C/W)
ton
T
duty = ton / T
RthJC = 0.83 °C/W
Figure 3. Typical output characteristics
GADG131220191116OCH
200
160
120
80
40
0
0
4
8
12
16
ID
(A)
VDS (V)
VGS =6 V
VGS =7 V
VGS =8 V
VGS =9 V
VGS =10 V
Figure 4. Typical transfer characteristics
GADG131220191116TCH
200
160
120
80
40
0
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 16 V
Figure 5. Typical gate charge characteristics
GADG131220191131QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
0
0
20
40
60
80
VDS
(V)
VGS
(V)
Qg (nC)
Qg
VDD = 480 V
ID = 52 A
Qgd
Qgs
Figure 6. Typical drain-source on-resistance
GADG191220191142RID
51
50
49
48
47
46
45
0
10
20
30
40
50
RDS(on)
(mΩ)
ID (A)
VGS = 10 V
STO67N60M6
Electrical characteristics (curves)
DS13208 - Rev 2
page 5/15



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