1

Electrical ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

±25

V

34

A

21

A

Drain current (pulsed)

200

A

150

W

dv/dt(2)

Peak diode recovery voltage slope

15

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

100

V/ns

Storage temperature range

-55 to 150

°C

Operating junction temperature range

°C

1. Pulse width is limited by safe operating area.

Symbol

Parameter

Value

Unit

Thermal resistance, junction-to-case

0.83

°C/W

Thermal resistance, junction-to-ambient(1)

43

°C/W

Thermal resistance, junction-to-ambient(2)

22

1. When mounted on 1 inch² FR-4 pcb, standard footprint 2 Oz copper board.

2. When mounted on 40x40mm FR-4 pcb, 6 cm² 2 Oz copper board.

Symbol

Parameter

Value

Unit

6

A

760

mJ

STO67N60M6

Electrical ratings

DS13208 - Rev 2

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