4 / 12 page
CYW2338
PRELIMINARY
4
Note:
1.
IDOvs T; Charge pump current variation vs. temperature.
[IIDO(SI)@TI - IIDO(SI)@25° CI]/IIDO(SI)@25°CI * 100% and
[IIDO(SO)@TI - IIDO(SO)@25°CI]/IIDO(SO)@25°CI *100%.
Electrical Characteristics: VCC = VP = 2.7V to 5.5V, TA = –40°C to +85°C, Unless otherwise specified
Parameter
Description
Test Condition
Pin
Min.
Typ.
Max.
Unit
ICC
Power Supply Current
PLL1 + PLL2
VCC1 = VCC2 = 3.0V
VCC1,
VCC2
10
mA
IPD
Power-down Current
Power-down, VCC = 3.0V
VCC1,
VCC2
125
µA
FIN1
Operating Frequency
PLL1
FIN1
100
2500
MHz
FIN2
PLL2
FIN2
45
1100
MHz
FOSC
Oscillator Input Frequency
No load on OSC_OUT
OSC_IN
5
45
MHz
With OSC_OUT loaded
5
25
MHz
F
φ
Phase Detector Frequency
10
MHz
PFIN1
Input Sensitivity
VCC = 2.7V
FIN1–15
4
dBm
VCC = 5.5V
–10
4
dBm
PFIN2VCC = 2.7V to 5.5V
FIN2
–10
4dBm
VOSC
Oscillator Input Sensitivity
VCC = 3.0V
OSC_IN
0.5
VP–P
IIH, IIL
High/Low Level Input
Current
-100
100
µA
VIH
High Level Input Voltage
VCC = 3.0V
DATA,
CLOCK,
LE
VCC * 0.8
V
VIL
Low Level Input Voltage
VCC * 0.2
V
IIH
High Level Input Current
–10
0.5
10
µA
IIL
Low Level Input Current
–10
0.5
10
µA
VOH
High level Output Voltage
VCC = 3.0V, IOH = -1 mA
VCC = 3.0V, IOL = 1 mA
FO/LD
VCC * 0.8
V
VOL
Low Level Output Voltage
VCC * 0.2
V
IDOH(SO)
IDO High, Source Current
VCC = VP = 3.0V,
DO = VP/2
DOPLL1
DOPLL2
–3.8
mA
IDOL(SO)
IDO Low, Source Current
–1
mA
IDOH(SI)
IDO High, Sink Current
3.8
mA
IDOL(SI)
IDO Low, Sink Current
1
mA
∆ID
O
IDO Charge Pump Sink and
Source Mismatch
VCC = VP = 3.0V,
[IIDO(SI)I – IIDO(SO)I]/
[1/2*{IIDO(SI)]I+IIDO(SO)I}]*100%
315
%
IDO vs T
Charge Pump Current
Variation vs. Temperature
–40°C<T<85°C VDO = VP/2
[1]
5
%
IOFF
Charge Pump High-Imped-
ance Leakage Current
VCC = VP = 3.0V,
±2.5
nA
Portuguese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
