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LT1737IGN Folha de dados(PDF) 24 Page - Linear Technology

Nome de Peças LT1737IGN
Descrição Electrónicos  High Power Isolated Flyback Controller
PDF  28 Pages
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Fabricante Electrônico  LINER [Linear Technology]
Página de início  http://www.linear.com
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LT1737IGN Folha de dados(HTML) 24 Page - Linear Technology

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LT1737
1737f
TYPICAL APPLICATIO S
R3 and D2. (Diode D2 prevents reverse emitter/base
breakdown in Q1 when MOSFET M1 is in the “ON” state.)
The raw flyback voltage at the drain of MOSFET M1 minus
the VBE of Q1 is converted to a current by R3 and then back
to a voltage at R4. Or, stated mathematically:
VV
V
R
R
FB
FLBK
BE
=
()


4
3
Resistor R13 provides an initial pre-load to the supply
output to improve light load regulation. Resistor divider
R8/R9 sets the undervoltage lockout threshold at nomi-
nally 10.4V for turn-on, with turn-off about 600mV lower.
Overall power supply efficiency and output regulation
versus input voltage and load current may be seen in
Figures 13 and 14.
5VIN APPLICATION
The LT1737 is a bipolar technology IC specified to operate
down to a minimum input supply voltage of 4.5V. Although
its GATE pin drives “low” nearly to ground, its “high”
capability is limited by a headroom requirement of roughly
2VBEs. Thus when operating at a worst case 4.5V supply,
the GATE output will only drive up to a nominal 3V or so.
Fortunately, MOSFETs are now available with specified
performance at this level of gate voltage.
The circuit shown in Figure 15 provides an isolated 5V
output from an input between 4.5V and 5.5V. Two Si9804
low gate voltage MOSFETs are paralleled to handle the
primary-side current—up to 12A peak. This circuit pro-
vides more output power than the previous examples. It
PGND
ISENSE
GATE
VC
FB
R1
0.02
M1
SI9804
10
4
9
T1
COILTRONICS
VP5-0083
VIN
3
VCC
UVLO
3VOUT
SGND
1737 F15
RCMPC
ROCMP
MINENAB
LT1737
R6
51k
5%
R5
51k
5%
C5
47pF
50V
NPO
6
8
7
3
910
15
16
2
14
13
12
4
5
11
1
ENDLY
SFST
OSCAP
tON
C3
1nF
25V
X7R
R7
2.2k
5%
R8
10
5%
D4
1N5240
D3
MBR0520
R4
75k
5%
C1A-B, C2A-B: SANYO POSCAP (10TPB220M)
D1: MOTOROLA 35V, 8A SCHOTTKY DIODE
D2: SIGNAL DIODE
D3: MOTOROLA 20V, 0.5A SCHOTTKY DIODE
D4: 10V, 500mW ZENER DIODE
M1, M2: SILICONIX/VISHAY 25V, 0.023
Ω N-CH MOSFET
R1: 5
× 0.10Ω, 1W (IRC LR2512)
T1: COILTRONICS TRANSFORMER
R3
3.01k
1%
C8
1
µF
25V
Z5U
C4
0.1
µF
25V
Z5U
C9
1nF
25V
X7R
R11
51
5%
11
2
12
1
M2
SI9804
C6
4.7nF
50V
X7R
C7
2.2nF
50V
X7R
5
8
6
7
D1
MBRD835L
C2A
220
µF
10V
+
C2B
220
µF
10V
+
R10
270
5%
VOUT
5V
3A
R9
15
5%
D2
BAS16
Q1
2N3906
R2
11.0k
1%
C1A
220
µF
10V
+
C1B
220
µF
10V
+
Figure 15. 4.5V-5.5V to Isolated 5V Converter



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