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P4C164LL-100CWCLF Folha de dados(PDF) 3 Page - Pyramid Semiconductor Corporation

Nome de Peças P4C164LL-100CWCLF
Descrição Electrónicos  VERY LOW POWER 8Kx8 STATIC CMOS RAM
PDF  10 Pages
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Fabricante Electrônico  PYRAMID [Pyramid Semiconductor Corporation]
Página de início  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C164LL-100CWCLF Folha de dados(HTML) 3 Page - Pyramid Semiconductor Corporation

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P4C164LL - VERY LOW POWER 8K x 8 STATIC CMOS RAM
Page 3
Document # SRAM116 REV 04
CAPACITAnCES(4)
Symbol
Parameter
Test Conditions
Max
Unit
C
IN
Input Capacitance
V
IN = 0V
7
pF
C
OUT
Output Capacitance
V
OUT = 0V
9
pF
POWER DISSIPATIOn CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature Range
*
-80
-90
-100
-120
Unit
I
CC
Dynamic Operating Current
Com / Ind / Military
55
55
55
55
mA
* Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate. The device is continuously
enabled for writing, i.e. CE
1 and WE ≤ VIL (max), OE is high. Switching inputs are 0V and 3V.
Sym Parameter
-80
-90
-100
-120
Unit
Min
Max
Min
Max
Min
Max
Min
Max
t
RC
Read Cycle Time
80
90
100
120
ns
t
AA
Address Access Time
80
90
100
120
ns
t
AC
Chip Enable Access Time
80
90
100
120
ns
t
OH
Output Hold from Address Change
10
10
10
10
ns
t
LZ
Chip Enable to Output in Low Z
10
10
10
10
ns
t
HZ
Chip Disable to Output in High Z
30
30
30
30
ns
t
OE
Output Enable Low to Data Valid
40
40
40
40
ns
t
OLZ
Output Enable Low to Low Z
5
5
5
5
ns
t
OHZ
Output Enable High to High Z
20
20
20
20
ns
t
PU
Chip Enable to Power Up Time
0
0
0
0
ns
t
PD
Chip Disable to Power Down Time
80
90
100
120
ns
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)



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