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P4C164LL-100CWCLF Folha de dados(PDF) 5 Page - Pyramid Semiconductor Corporation

Nome de Peças P4C164LL-100CWCLF
Descrição Electrónicos  VERY LOW POWER 8Kx8 STATIC CMOS RAM
PDF  10 Pages
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Fabricante Electrônico  PYRAMID [Pyramid Semiconductor Corporation]
Página de início  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C164LL-100CWCLF Folha de dados(HTML) 5 Page - Pyramid Semiconductor Corporation

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P4C164LL - VERY LOW POWER 8K x 8 STATIC CMOS RAM
Page 5
Document # SRAM116 REV 04
AC CHARACTERISTICS—WRITE CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol Parameter
-80
-90
-100
-120
Unit
Min
Max
Min
Max
Min
Max
Min
Max
t
WC
Write Cycle Time
80
90
100
120
ns
t
CW
Chip Enable Time to End of Write
70
80
80
100
ns
t
AW
Address Valid to End of Write
70
80
80
100
ns
t
AS
Address Setup Time
0
0
0
0
ns
t
WP
Write Pulse Width
60
60
60
60
ns
t
AH
Address Hold Time
0
0
0
0
ns
t
DW
Data Valid to End of Write
40
40
40
40
ns
t
DH
Data Hold Time
0
0
0
0
ns
t
WZ
Write Enable to Output in High Z
30
30
30
30
ns
t
OW
Output Active from End of Write
10
10
10
10
ns
TIMIng WAVEFORM OF WRITE CYCLE nO. 1 (WE COnTROLLED)(6)
Notes:
11. CE
1 and WE must be LOW, and CE2 HIGH for WRITE cycle.
12. OE is LOW for this WRITE cycle to show t
WZ and tOW.
13. If CE
1 goes HIGH, or CE2 goes LOW, simultaneously with WE HIGH,
the output remains in a high impedance state
14. Write Cycle Time is measured from the last valid address to the first
transitioning address.



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