STGW50H60DF datasheet(1/12 Pages) STMICROELECTRONICS

Nome de Peças	STGW50H60DF

Descrição Electrónicos	50 A, 600 V field stop trench gate IGBT with Ultrafast diode

PDF	12 Pages

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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This is information on a product in full production.

July 2012

Doc ID 018673 Rev 5

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12

STGW50H60DF

50 A, 600 V field stop trench gate IGBT with Ultrafast diode

Datasheet

− production data

Features

■ High speed switching

■ Tight parameters distribution

■ Safe paralleling

■ Low thermal resistance

■ 6 µs short-circuit withstand time

■ Ultrafast soft recovery antiparallel diode

■ Lead free package

Applications

■ Photovoltaic inverters

■ Uninterruptible power supply

■ Welding

■ Power factor correction

■ High switching frequency converters

Description

Using advanced proprietary trench gate and field

stop structure, this IGBT leads to an optimized

compromise between conduction and switching

losses maximizing the efficiency for high

switching frequency converters. Furthermore, a

slightly positive VCE(sat) temperature coefficient

and a very tight parameter distribution result in an

easier paralleling operation.

Figure 1.

Internal schematic diagram

TO-247

1

2

3

Table 1.

Device summary

Order code

Marking

Package

Packaging

STGW50H60DF

GW50H60DF

TO-247

Tube

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Nº de peça semelhante - STGW50H60DF

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Descrição semelhante - STGW50H60DF

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Fairchild Semiconductor	FGH50T65UPD	344Kb / 10P	650 V, 50 A Field Stop Trench IGBT
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ON Semiconductor	AFGHL50T65SQ	244Kb / 8P	Field Stop Trench IGBT 50A, 650V January, 2020 ??Rev. 1
	AFGHL50T65SQD	257Kb / 9P	Field Stop Trench IGBT 50A, 650V January, 2020 ??Rev. 1
	FGHL50T65SQDT	391Kb / 9P	IGBT - Field Stop, Trench 650 V, 50 A February, 2020 ??Rev. P0
	FGH50T65SQD	548Kb / 10P	IGBT - Field Stop, Trench 650 V, 50 A November, 2019 ??Rev. 3

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