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STGW50H60DF Folha de dados(PDF) 6 Page - STMicroelectronics

Nome de Peças STGW50H60DF
Descrição Electrónicos  50 A, 600 V field stop trench gate IGBT with Ultrafast diode
PDF  12 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW50H60DF Folha de dados(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STGW50H60DF
6/12
Doc ID 018673 Rev 5
Figure 8.
Normalized VGE(th) vs. junction
temperature
Figure 9.
Gate charge vs. gate-emitter
voltage
Figure 10.
Capacitance variations (f = 1 MHz,
VGE = 0)
Figure 11.
Switching losses vs. collector
current
Figure 12.
Switching losses vs. gate
resistance
Figure 13.
Switching losses vs. temperature
AM11853v1
0.7
0.8
0.9
1.0
-50
-25
0
25
50
75
100
125
VGE(th)
norm (V)
TJ (ºC)
I C = 1 mA
AM11836v1
0
2
4
6
8
10
12
14
16
050
100
150
200
VGE (V)
QG (nC)
AM11837v1
10
100
1000
10000
0.1
1
10
C (pF)
VCE (V)
Cres
Coes
Cies
AM11838v1
0
500
1000
1500
2000
2500
3000
3500
20
40
60
80
E (μJ)
IC (A)
TJ= 25°C
TJ= 125°C ----
VCC= 400 V, VGE = 15 V, RG = 10 Ω
EON
EOFF
AM11839v1
0
500
1000
1500
2000
2500
3000
3500
4000
010
20
30
40
E (μJ)
RG (Ω)
VCC= 400V, VGE = 15V,
IC= 50 A, TJ = 125°C
EON
EOFF
AM11840v1
800
900
1000
1100
1200
1300
1400
25
50
75
100
125
TJ (°C)
VCC= 400V, VGE = 15V,
IC= 50 A, RG = 10Ω
EON
EOFF



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