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STGW50H60DF Folha de dados(PDF) 3 Page - STMicroelectronics |
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STGW50H60DF Folha de dados(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STGW50H60DF Electrical characteristics Doc ID 018673 Rev 5 3/12 2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 2 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 50 A 1.8 V VGE = 15 V, IC = 50 A TJ = 125 °C 2.0 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 6.0 V ICES Collector cut-off current (VGE = 0) VCE = 600 V 25 µA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V 250 nA Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 - 7150 275 140 - pF pF pF Qg Total gate charge VCC = 400 V, IC = 50 A, VGE = 15 V -217 - nC Qge Gate-emitter charge - 61 - nC Qgc Gate-collector charge - 90 - nC Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCE = 400 V, IC = 50 A, RG = 10 Ω, VGE = 15 V - 62 28 1800 - ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCE = 400 V, IC = 50 A, RG = 10 Ω, VGE = 15 V TJ = 125 °C - 62 29 1680 - ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCE = 400 V, IC = 50 A, RG = 10 Ω, VGE = 15 V - 34 178 40 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCE = 400 V, IC = 50 A, RG = 10 Ω, VGE = 15 V TJ = 125 °C - 45 205 80 - ns ns ns |
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